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Novel material for nonvolatile ovonic unified memory (OUM)-Ag11In12Te26Sb51 phase change semiconductor 期刊论文
CHINESE PHYSICS, 2004, 卷号: 13, 期号: 7, 页码: 1167-1170
Liu, B; Song, ZT; Zhang, T; Feng, SL; Gan, FX
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/24
Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 6, 页码: 1143-1146
Liu, B; Song, ZT; Feng, SL; Chen, B
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
Structure and electrical properties of Ge2Sb2Te5 thin film used for Ovonic unified memory 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 4, 页码: 741-743
Zhang, T; Liu, B; Xia, JL; Song, ZT; Feng, SL; Chen, B
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/24


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