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P-type octahedral Cu2O particles with exposed {111} facets andsuperior CO sensing properties 期刊论文
Sensors and Actuators B: Chemical, 2017, 卷号: 239, 页码: 211–217
作者:  Lili Wang;  Rui Zhang;  Tingting Zhou;  Zheng Lou;  Jianan Deng
收藏  |  浏览/下载:27/0  |  提交时间:2018/06/15
Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission 期刊论文
National Science Review, 2017, 卷号: 4, 页码: 196–209
作者:  Ying Yu;  Guo-Wei Zha;  Xiang-Jun Shang;  Shuang Yang;  Ban-Quan Sun
收藏  |  浏览/下载:26/0  |  提交时间:2018/06/15
Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets 期刊论文
rsc advances, 2016, 卷号: 6, 期号: 55, 页码: 50245-50249
Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Junxi Wang; Jinmin Li
收藏  |  浏览/下载:21/0  |  提交时间:2016/06/01
First principles study of the electronic properties of twinned SiC nanowires 期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:  Li JB
收藏  |  浏览/下载:100/6  |  提交时间:2011/07/05
Defects in gallium nitride nanowires: First principles calculations 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305
Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.)
收藏  |  浏览/下载:105/1  |  提交时间:2010/10/11
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102
作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT
收藏  |  浏览/下载:58/0  |  提交时间:2010/03/08
Modulation spectroscopy of GaAs covered by InAs quantum dots 期刊论文
chinese physics letters, 2002, 卷号: 19, 期号: 7, 页码: 1010-1012
作者:  Xu B;  Jin P;  Li CM
收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
Polarization insensitive gain medium with hybrid strained quantum well 期刊论文
optics and laser technology, 2002, 卷号: 34, 期号: 8, 页码: 595-597
Yin JZ; Du GT; Liu SP; Liu ZS; Wang XQ; Li ZT; Yin ZY; Yang SR
收藏  |  浏览/下载:33/0  |  提交时间:2010/08/12
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
作者:  Zhao DG
收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
Void-like defects in annealed Czochralski silicon 期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 16, 页码: 2311-2312
Gao M; Duan XF; Peng LM; Li J
收藏  |  浏览/下载:27/0  |  提交时间:2010/08/12


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