已选(0)清除
条数/页: 排序方式:
|
| P-type octahedral Cu2O particles with exposed {111} facets andsuperior CO sensing properties 期刊论文 Sensors and Actuators B: Chemical, 2017, 卷号: 239, 页码: 211–217 作者: Lili Wang; Rui Zhang; Tingting Zhou; Zheng Lou; Jianan Deng 收藏  |  浏览/下载:27/0  |  提交时间:2018/06/15 |
| Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission 期刊论文 National Science Review, 2017, 卷号: 4, 页码: 196–209 作者: Ying Yu; Guo-Wei Zha; Xiang-Jun Shang; Shuang Yang; Ban-Quan Sun 收藏  |  浏览/下载:26/0  |  提交时间:2018/06/15 |
| Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets 期刊论文 rsc advances, 2016, 卷号: 6, 期号: 55, 页码: 50245-50249 Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Junxi Wang; Jinmin Li 收藏  |  浏览/下载:21/0  |  提交时间:2016/06/01 |
| First principles study of the electronic properties of twinned SiC nanowires 期刊论文 journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191 作者: Li JB 收藏  |  浏览/下载:100/6  |  提交时间:2011/07/05
|
| Defects in gallium nitride nanowires: First principles calculations 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305 Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.) 收藏  |  浏览/下载:105/1  |  提交时间:2010/10/11
|
| Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102 作者: Jiang DS; Zhang SM; Yang H; Yang H; Wang YT 收藏  |  浏览/下载:58/0  |  提交时间:2010/03/08
|
| Modulation spectroscopy of GaAs covered by InAs quantum dots 期刊论文 chinese physics letters, 2002, 卷号: 19, 期号: 7, 页码: 1010-1012 作者: Xu B; Jin P; Li CM 收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
|
| Polarization insensitive gain medium with hybrid strained quantum well 期刊论文 optics and laser technology, 2002, 卷号: 34, 期号: 8, 页码: 595-597 Yin JZ; Du GT; Liu SP; Liu ZS; Wang XQ; Li ZT; Yin ZY; Yang SR 收藏  |  浏览/下载:33/0  |  提交时间:2010/08/12
|
| Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文 journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734 作者: Zhao DG 收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
|
| Void-like defects in annealed Czochralski silicon 期刊论文 applied physics letters, 1998, 卷号: 73, 期号: 16, 页码: 2311-2312 Gao M; Duan XF; Peng LM; Li J 收藏  |  浏览/下载:27/0  |  提交时间:2010/08/12
|