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科研机构
半导体研究所 [13]
内容类型
期刊论文 [12]
会议论文 [1]
发表日期
2011 [2]
2008 [1]
2006 [1]
2005 [1]
2003 [3]
2001 [4]
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半导体材料 [13]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG
;
Kong, GL
;
Zeng, XB
;
Hao, HY
;
Liu, FZ
收藏
  |  
浏览/下载:104/29
  |  
提交时间:2010/03/08
silicon
conductivity
chemical vapor deposition
microcrystallinity
absorption
photoconductivity
Nanocrystalline silicon films with high conductivity and the application for PIN solar cells
期刊论文
vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128
Min C (Cui Min)
;
Zhang WJ (Zhang Weija)
;
Wang TM (Wang Tianmin)
;
Jin F (Jin Fei)
;
Li GH (Li Guohua)
;
Ding K (Ding Kun)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/04/11
nc-Si : H
conductivity
PECVD
films
solar cells
Silica and alumina thin films grown by liquid phase deposition
期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1725-1728
Sun, J
;
Hu, LZ
;
Wang, ZY
;
Du, GT
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  |  
浏览/下载:25/0
  |  
提交时间:2010/03/17
silica
alumina
liquid phase deposition
semiconductors
ELECTRICAL CHARACTERISTICS
DIOXIDE FILMS
OXIDE-FILMS
Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy
期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13
Shen XM
;
Feng G
;
Zhang BS
;
Duan LH
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
scanning electron microscopy
X-ray diffraction
Metalorganic vapor phase epitaxy
selective area growth
gallium nitride
CUBIC GAN
OVERGROWN GAN
DEPOSITION
GAAS(100)
Violet/blue photoluminescence from CeO2 thin film
期刊论文
chinese science bulletin, 2003, 卷号: 48, 期号: 12, 页码: 1198-1200
Chai CL
;
Yang SY
;
Liu ZK
;
Liao MY
;
Chen NF
收藏
  |  
浏览/下载:253/3
  |  
提交时间:2010/08/12
cerium dioxide thin film
PL
violet/blue
CERIUM OXIDE
DEPOSITION
INTERFACE
EMISSION
SILICON
GROWTH
Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260
Tan LW
;
Wang QY
;
Wang J
;
Yu YH
;
Liu ZL
;
Lin LY
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/08/12
heteroepitaxial growth
gamma-Al2O3
silicon
silicon on insulator
FILMS
SI
DEPOSITION
AL2O3
Epitaxial growth of SiC on complex substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
Indium doping effect on GaN in the initial growth stage
期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:
Han PD
收藏
  |  
浏览/下载:154/29
  |  
提交时间:2010/08/12
GaN
indium doping
initial growth stage
morphology
optical transmission
photoluminescence
VAPOR-PHASE EPITAXY
BUFFER LAYER
FILMS
SAPPHIRE
DEPOSITION
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