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科研机构
半导体研究所 [96]
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期刊论文 [82]
会议论文 [14]
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2011 [4]
2010 [5]
2009 [2]
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半导体材料 [96]
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
The p recombination layer in tunnel junctions for micromorph tandem solar cells
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 78402
Yao WJ
;
Zeng XB
;
Peng WB
;
Liu SY
;
Xie XB
;
Wang C
;
Liao XB
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/02/06
SILICON
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:
Pan X
;
Hou QF
收藏
  |  
浏览/下载:83/7
  |  
提交时间:2011/07/05
ELECTRON-MOBILITY TRANSISTORS
AL-CONTENT
STRESS-CONTROL
PHASE EPITAXY
ALGAN
BUFFER
LAYERS
HETEROSTRUCTURES
INTERLAYERS
SILICON
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
收藏
  |  
浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102
Gu YX (Gu Yong-Xian)
;
Yang T (Yang Tao)
;
Ji HM (Ji Hai-Ming)
;
Xu PF (Xu Peng-Fei)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:140/24
  |  
提交时间:2010/09/07
quantum dot
symmetrized Hamiltonian
Burt-Foreman Hamiltonian
finite element method
spurious solutions
EFFECTIVE-MASS APPROXIMATION
P THEORY
Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702
Li GD (Li Guodong)
;
Yin H (Yin Hong)
;
Zhu QS (Zhu Qinsheng)
;
Sakaki H (Sakaki Hiroyuki)
;
Jiang C (Jiang Chao)
收藏
  |  
浏览/下载:204/41
  |  
提交时间:2010/10/11
PHOTOLUMINESCENCE
HETEROJUNCTIONS
SPECTROSCOPY
SYSTEMS
PHYSICS
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW
;
Xu XQ
;
Wang J
;
Liu JM
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:67/8
  |  
提交时间:2011/07/05
IONIZED-IMPURITY-SCATTERING
COMPOSITIONAL INHOMOGENEITY
PHASE-SEPARATION
QUANTUM-WELLS
ALLOY
CATHODOLUMINESCENCE
HETEROSTRUCTURES
SEMICONDUCTORS
TRANSPORT
MOBILITY
Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
Huang TM (Huang TianMao)
;
Chen NF (Chen NuoFu)
;
Zhang XW (Zhang XingWang)
;
Bai YM (BaiYiMing)
;
Yin ZG (Yin ZhiGang)
;
Shi HW (Shi HuiWei)
;
Zhang H (Zhang Han)
;
Wang Y (Wang Yu)
;
Wang YS (Wang YanShuo)
;
Yang XL (Yang XiaoLi)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/11/14
polycrystalline silicon thin film
aluminum induced crystallization
(111) preferred orientation
INDUCED LAYER-EXCHANGE
AMORPHOUS-SILICON
SOLAR-CELLS
GLASS
SI
ORIENTATION
MODEL
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.)
;
Zhang XW (Zhang X. W.)
;
Fan YM (Fan Y. M.)
;
Tan HR (Tan H. R.)
;
Yin ZG (Yin Z. G.)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/12/28
Cubic boron nitride
Doping
Ion beam assisted deposition
X-ray photoelectron spectroscopy
RAY PHOTOELECTRON-SPECTROSCOPY
VAPOR-DEPOSITION
SI
NUCLEATION
GROWTH
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer
期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:
Liu J
;
Zhu H
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  |  
浏览/下载:72/2
  |  
提交时间:2010/03/08
HEMT
2DEG
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