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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Morphological defects and uniformity issues of 4h-sic homoepitaxial layers grown on off-oriented (0001)si faces 期刊论文 Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 作者:  Sun, G. S.;  Liu, X. F.;  Gong, Q. C.;  Wang, L.;  Zhao, W. S. 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 4h-sic  Homoepitaxial layers  Surface morphological defect  Optical microscopy   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 4H-SiC  homoepitaxial layers  surface morphological defect  optical microscopy  SILICON-CARBIDE  DISLOCATIONS  FILMS   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：166/18  |  提交时间：2010/03/29 4H-SiC