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CORC

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Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition 期刊论文
Nanoscale Research Letters, 2017, 卷号: 12, 页码: 1-8
作者:  Xianghai Ji;  Xiaoguang Yang;  Tao Yang
收藏  |  浏览/下载：14/0  |  提交时间：2018/05/23
Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays 期刊论文
nanotechnology, 2015, 卷号: 26, 期号: 26, 页码: 265302
Tuanwei Shi; Xiaoye Wang; Baojun Wang; Wei Wang; Xiaoguang Yang; Wenyuan Yang; Qing Chen; Hongqi Xu; Shengyong Xu; Tao Yang
收藏  |  浏览/下载：18/0  |  提交时间：2016/03/23
InAs-mediated growth of vertical InSb nanowires on Si substrates 期刊论文
nanoscale research letters, 2013, 卷号: 8
Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang
收藏  |  浏览/下载：15/0  |  提交时间：2014/03/17
Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC 期刊论文
materials science forum, 2012, 卷号: 717-720, 页码: 105-108
Zhao, Wanshun; Sun, Guosheng; Wu, Hailei; Yan, Guoguo; Zheng, Liu; Dong, Lin; Wang, Lei; Liu, Xingfang; Yang, Lijun
收藏  |  浏览/下载：17/0  |  提交时间：2013/04/22
Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14
Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038501
Kong N (Kong Ning); Liu JQ (Liu Jun-Qi); Li L (Li Lu); Liu FQ (Liu Feng-Qi); Wang LJ (Wang Li-Jun); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：195/33  |  提交时间：2010/04/22
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/11/14
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:  Yang JK;  Wei TB;  Duan RF
收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载：182/43  |  提交时间：2010/03/08

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