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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108
Zhu YH (Zhu Yuan-Hui); Xu Q (Xu Qiang); Fan WJ (Fan Wei-Jun); Wang JW (Wang Jian-Wei)
收藏  |  浏览/下载：67/3  |  提交时间：2010/05/07
ALLOYS  GE  
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong); Nosho H (Nosho, Hidetaka); Tackeuchi A (Tackeuchi, Atsushi); Bian LF (Bian, Lifeng); Dong JR (Dong, Jianrong); Niu ZC (Niu, Zhichuan)
收藏  |  浏览/下载：175/28  |  提交时间：2010/03/08
ALLOYS  
Room Temperature Ferromagnetism of Mn Implanted AlInN 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202
Majid A; Sharif R; Ali A; Zhu JJ
收藏  |  浏览/下载：248/25  |  提交时间：2010/03/08
Elasticity, band structure, and piezoelectricity of BexZn1-xO alloys 期刊论文
physics letters a, 2008, 卷号: 372, 期号: 16, 页码: 2930-2933
Duan, YF; Shi, HL; Qin, LX
收藏  |  浏览/下载：78/0  |  提交时间：2010/03/08
Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108
作者:  Zhang XW
收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11
Magnetic properties and rectifying behaviour of silicon doped with gadolinium 期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473
Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY
收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:  Xu YQ
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003
作者:  Tan PH
收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:  Xu YQ
收藏  |  浏览/下载：395/1  |  提交时间：2010/08/12

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