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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 2, 页码: 278-281 作者:  Song HP;  Jiao CM;  Wei HY 收藏  |  浏览/下载：199/82  |  提交时间：2010/03/08 Nanostructures  Metalorganic chemical vapor deposition  Zinc compounds  Semiconducting II-VI materials   Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文 nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402 Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping) 收藏  |  浏览/下载：122/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文 modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/08 aluminum nitride  low pressure metalorganic chemical vapor deposition (LP-MOCVD)  V/III ratio  preferential orientation growth mechanism   The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109 Wang XF; Zeng YP; Wang BQ; Zhu ZP; Du XQ; Li M; Chang BK 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 structure  NEA  integrated photosensitivity  GaAs  Cs : O  SPECTRAL RESPONSE  NEA PHOTOCATHODES  LAYER THICKNESS  CS  SURFACE  PHOTOEMISSION  SYSTEM   Low -temperature preparation of ZnO films on Si substrates by MOCVD 期刊论文 功能材料与器件学报, 2006, 卷号: 12, 期号: 1, 页码: 63-66 作者:  Wang Jun;  Wang Jun 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/23 Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates 期刊论文 journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82 Ye ZZ; Ma DW; He JH; Huang JY; Zhao BH; Luo XD; Xu ZY 收藏  |  浏览/下载：487/1  |  提交时间：2010/08/12 characterization  crystal structure  DC sputtering  alloys  zinc compounds  semiconducting II-VI materials  THIN-FILMS  ROOM-TEMPERATURE  ULTRAVIOLET-LASER  SPRAY-PYROLYSIS  ZNO  MGXZN1-XO  EMISSION  ALLOY   Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate 期刊论文 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103 Xu HZ; Bell A; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 gallium nitride  metalorganic vapor-phase epitaxy  photoluminescence  yellow luminescence  N-TYPE GAN  PERSISTENT PHOTOCONDUCTIVITY  THIN-FILMS  DOPED GAN  DEEP LEVELS  ORIGIN  PHOTOLUMINESCENCE  DEPENDENCE  VACANCIES  EPITAXY