CORC

在结果中检索

CORC

浏览/检索结果: 共305条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Hot electron injection: An efficacious approach to charge LaCoO3forimproving the water splitting efficiency 期刊论文
Applied Catalysis B: Environmental, 2017, 卷号: 219, 页码: 432–438
作者:  Bo-Tao Zhang;  Jun Liu;  Shizhong Yue;  Yanguo Teng;  Zhijie Wang
收藏  |  浏览/下载：32/0  |  提交时间：2018/05/30
Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum 期刊论文
advanced optical materials, 2015, 卷号: 2, 期号: 5, 页码: 451-458
Jun Yin; Yang Li; Shengchang Chen; Changqing Chen; Jing Li; Junyong Kang; Wei Li; Peng Jin; Yonghai Chen; Zhihao Wu; Jiangnan Dai; Yanyan Fang
收藏  |  浏览/下载：16/0  |  提交时间：2016/03/29
Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells 期刊论文
advanced optical materials, 2014, 卷号: 2, 期号: 5, 页码: 451-458
Yin, J; Li, Y; Chen, SC; Li, J; Kang, JY; Li, W; Jin, P; Chen, YH; Wu, ZH; Dai, JN; Fang, YY; Chen, CQ
收藏  |  浏览/下载：17/0  |  提交时间：2015/08/21
Design of a three-layer hot-wall horizontal flow MOCVD reactor 期刊论文
journal of semiconductors, 2012, 卷号: 33, 期号: 9, 页码: 093005
Gu, Chengyan; Lee, Chengming; Liu, Xianglin
收藏  |  浏览/下载：11/0  |  提交时间：2013/05/07
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：93/7  |  提交时间：2011/07/05

©版权所有 ©2017 CSpace - Powered by CSpace