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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Heteroepitaxy of ZnO films on epi-GaN/Al2O3(0001) by MOCVD 会议论文 International Conference on Material and Manufacturing, ICMM 2011, September 7, 2011 - September 9, 2011 作者:  Yu, Qiaoqun;  Ma, Jin;  Luan, Caina;  Kong, Lingyi;  Zhu, Zhen 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：118/36  |  提交时间：2010/03/29 surface morphology evolution  InAs nanostructures  island-pit pairs  MOLECULAR-BEAM EPITAXY  QUANTUM DOTS  COOPERATIVE NUCLEATION  HETEROEPITAXY  TRANSITION  ISLANDS  GROWTH   A model of dislocations at the interface of the bonded wafers 会议论文 conference on optical interconnects for telecommunication and data communications, beijing, peoples r china, nov 08-10, 2000 作者:  Han WH;  Wang LC 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 wafer bonding  heteroepitaxy  lattice mismatch  edge-like dislocations  thermal stress  60 degrees dislocation lines  GAAS   Molecular mechanics simulation of the diamond nucleation and growth on silicon (001) and (111) surfaces 会议论文 5th European Vacuum Conference (EVC 5) / 10th International Conference on Thin Films (ICTF 10), SALAMANCA, SPAIN, SEP 23-27, 1996 作者:  Zhang, RQ;  Wang, WL;  Estevea, J;  Bertran, E 收藏  |  浏览/下载：2/0  |  提交时间：2015/07/31 diamond film  silicon surfaces  heteroepitaxy  interface structure  modelling   Heteroepitaxy of cubic GaN: influence of interface structure 会议论文 royal-microscopical-society conference on microscopy of semiconducting materials, oxford, england, apr 07-10, 1997 Trampert A; Brandt O; Yang H; Yang B; Ploog KH 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 MOLECULAR-BEAM EPITAXY  GAN/GAAS(001)  GROWTH