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Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510
Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：182/49  |  提交时间：2010/06/18
Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2657-2660
Li, J; Wang, RZ; Lan, W; Zhang, XW; Duan, ZQ; Wang, B; Yan, H
收藏  |  浏览/下载：53/2  |  提交时间：2010/03/08
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789
作者:  Jin P
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文
applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
作者:  Jin P
收藏  |  浏览/下载：458/3  |  提交时间：2010/08/12
Hydrogenated amorphous silicon films with significantly improved stability 期刊论文
solar energy materials and solar cells, 2001, 卷号: 68, 期号: 1, 页码: 123-133
Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL
收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12
High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文
symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998
Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL
收藏  |  浏览/下载：19/0  |  提交时间：2010/10/29
The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 1-2, 页码: 93-96
Zhang JP; Sun DZ; Li XB; Wang XL; Fu RH; Kong MY
收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12

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