CORC

在结果中检索

CORC

浏览/检索结果: 共45条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Ultra-thin ZnO film as an electron transport layer for realizing the high efficiency of organic solar cells 期刊论文
RSC Advances, 2017, 卷号: 7, 页码: 14694–14700
作者:  Dan Chi;  Shihua Huang;  Shizhong Yue;  Kong Liu;  Shudi Lu
收藏  |  浏览/下载：14/0  |  提交时间：2018/05/31
Enhanced efficiency in polymer solar cells via hydrogen plasma treatment of ZnO electron transport layers 期刊论文
journal of materials chemistry a, 2015, 卷号: 3, 期号: 7, 页码: 3719-3725
Hongli Gao; Xingwang Zhang; Junhua Meng; Zhigang Yin; Liuqi Zhang; Jinliang Wu; Xin Liu
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/23
Two-dimensional electron transport in AlGaN/GaN heterostructures 期刊论文
physica b-condensed matter, 2012, 卷号: 407, 期号: 21, 页码: 4277-4280
Tan RB (Tan, Ren-Bing); Xu W (Xu, Wen); Zhou Y (Zhou, Yu); Zhang XY (Zhang, Xiao-Yu); Qin H (Qin, Hua)
收藏  |  浏览/下载：9/0  |  提交时间：2013/03/25
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun)
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/26
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun
收藏  |  浏览/下载：13/0  |  提交时间：2013/04/19
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏  |  浏览/下载：71/5  |  提交时间：2011/07/05
Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:  Zhang Y;  Li YB
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103
Li GD; Jiang C; Zhu QS; Sakaki H
收藏  |  浏览/下载：60/9  |  提交时间：2011/07/05
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 3, 页码: 30104
作者:  Deng QW;  Hou QF;  Bi Y
收藏  |  浏览/下载：14/0  |  提交时间：2011/09/14
GAN  

©版权所有 ©2017 CSpace - Powered by CSpace