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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102 Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：140/24  |  提交时间：2010/09/07 quantum dot  symmetrized Hamiltonian  Burt-Foreman Hamiltonian  finite element method  spurious solutions  EFFECTIVE-MASS APPROXIMATION  P THEORY   Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104 Hao GD (Hao Guo-Dong); Chen YH (Chen Yong-Hai); Fan YM (Fan Ya-Ming); Huang XH (Huang Xiao-Hui); Wang HB (Wang Huai-Bing) 收藏  |  浏览/下载：12/0  |  提交时间：2010/12/28 LIGHT-EMITTING-DIODES  WURTZITE SEMICONDUCTORS  QUANTUM-WELLS  MATRIX-ELEMENTS  SEMIPOLAR  SAPPHIRE   IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者:  Hao GD 收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05 Strain effect  optical anisotropy  A-plane  R-plane  CONTINUOUS-WAVE OPERATION  LIGHT-EMITTING-DIODES  LASER-DIODES  POLARIZATION ANISOTROPY  QUANTUM-WELLS  SEMICONDUCTORS   Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 期刊论文 journal of crystal growth, 2006, 卷号: 287, 期号: 1, 页码: 28-33 Fan WJ; Abiyasa AP; Tan ST; Yu SF; Sun XW; Xia JB; Yeo YC; Li MF; Chong TC 收藏  |  浏览/下载：98/0  |  提交时间：2010/04/11 computer simulation  low dimensional structures  zinc compounds  semiconducting II-VI materials  OPTICAL GAIN SPECTRA  BAND-STRUCTURES  ROOM-TEMPERATURE  LASERS   Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 acceptor binding energy  hole effective-mass Hamiltonian  wurtzite GaN   Energy band and acceptor binding energy of GaN and AlxGa1-xN 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 204-206 Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY 收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12 acceptor binding energy  hole effective-mass Hamiltonian  wurtzite GaN