CORC

浏览/检索结果: 共16条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载:69/3  |  提交时间:2011/07/05
Photorefractive effects in ZnO nanorod doped liquid crystal cell 期刊论文
applied optics, 2011, 卷号: 50, 期号: 8, 页码: 1101-1104
作者:  Guo YB
收藏  |  浏览/下载:71/7  |  提交时间:2011/07/05
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载:63/4  |  提交时间:2011/07/05
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载:70/1  |  提交时间:2010/03/08
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY
收藏  |  浏览/下载:31/0  |  提交时间:2010/10/29
Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy 期刊论文
solid-state electronics, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
作者:  Han PD
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
作者:  Zhao DG
收藏  |  浏览/下载:68/0  |  提交时间:2010/08/12
Determination of oxidation states in magnetic multilayers 期刊论文
chinese physics letters, 2002, 卷号: 19, 期号: 2, 页码: 266-268
Yu GH; Li MH; Zhu FW; Chai CL; Lai WY
收藏  |  浏览/下载:84/4  |  提交时间:2010/08/12
Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK
收藏  |  浏览/下载:99/7  |  提交时间:2010/08/12
Indium doping effect on GaN in the initial growth stage 期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:  Han PD
收藏  |  浏览/下载:155/29  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace