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科研机构
半导体研究所 [3]
兰州大学 [2]
高能物理研究所 [1]
山东大学 [1]
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会议论文 [7]
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2013 [1]
2011 [2]
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1998 [2]
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半导体材料 [3]
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The effect of oxygen-rich condition on properties of ZnO:In films by sputtering
会议论文
2012 2nd International Conference on Chemical, Material and Metallurgical Engineering, ICCMME 2012, Kunming, China, December 15, 2012 - December 16, 2012
作者:
Li, Hui
;
Feng, Haitao
;
Zhang, Fanghui
;
Liu, Yun
;
Xie, Erqing
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/01/20
Zinc oxide
Defects
Films
Metallurgical engineering
Oxygen
Photoconductivity
Photoelectrons
Sputtering
X ray diffraction
X ray photoelectron spectroscopy
Crystal qualities
Direct current
Element constituent
Oxygen-rich conditions
Persistent Photoconductivity
Photoluminescence spectrum
Reactive magnetron sputtering
Trap center
Visible emissions
ZnO
Investigation of the Performance of Various CVD Diamond Crystal Qualities for the Measurement of Radiation Doses from a Low Energy Mammography X-Ray Beam, Compared with MC Code (PENELOPE) Calculations
会议论文
Chicago, IL, USA, 2011
作者:
Y.I Zakari
;
R.D Mavunda
;
T.L Nam and R.J Keddy
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  |  
浏览/下载:8/0
  |  
提交时间:2017/11/10
Composition-dependent properties of MgxZn1-xO films by sputtering
会议论文
2011 2nd International Conference on Mechanic Automation and Control Engineering, MACE 2011, Inner Mongolia, China, July 15, 2011 - July 17, 2011
作者:
Li, Hui
;
Liu, Shibin
;
Xie, Erqing
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  |  
浏览/下载:4/0
  |  
提交时间:2017/01/20
Zinc
Crystal structure
Mechanics
Zinc oxide
Zinc sulfide
Ambient conditions
Annealing temperatures
Barrier layers
Crystal qualities
Mg content
Wurtzite structure
Laser-induced damage mechanisms and improvement of optical qualities of bulk potassium dihydrogen phosphate crystals
会议论文
16th American Conference on Crystal Growth and Epitaxy/12th US Workshop on Organometallic Vapor Phase Epitaxy*, JUL 10-OCT 15, 2005
作者:
Kunpeng Wang
;
Changshui Fang
;
Jianxiu Zhang
;
Xun Sun
;
Shenglai Wang
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/31
A2. Laser damage threshold
A2. Laser-induced damage mechanisms
B1. KDP crystals
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zheng LX
;
Xie MH
;
Xu SJ
;
Cheung SH
;
Tong SY
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  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
surface processes
molecular beam epitaxy
nitrides
semiconducting gallium compounds
GAN(0001) SURFACES
RECONSTRUCTIONS
Growth and characterization of GaN on LiGaO2
会议论文
9th international conference on metalorganic vpour phase epitaxy (icmovpe-ix), la jolla, california, may 31-jun 04, 1998
作者:
Han PD
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  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
DIODES
Growth and characterization of GaN on LiGaO2 and LiAlO2
会议论文
2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998
作者:
Han PD
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浏览/下载:12/0
  |  
提交时间:2010/10/29
DIODES
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