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科研机构
半导体研究所 [143]
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期刊论文 [126]
会议论文 [17]
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2016 [1]
2012 [1]
2011 [9]
2010 [6]
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半导体材料 [143]
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Recent Advances in the Inverted Planar Structure of Perovskite Solar Cells
期刊论文
accounts of chemical research, 2016, 卷号: 49, 期号: 1, 页码: 155-165
Lei Meng
;
Jingbi You
;
Tzung-Fang Guo
;
Yang Yang
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2017/03/10
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2012, 卷号: 359, 页码: 55-59
Li LG (Li, Li-Gong)
;
Liu SM (Liu, Shu-Man)
;
Luo S (Luo, Shuai)
;
Yang T (Yang, Tao)
;
Wang LJ (Wang, Li-Jun)
;
Liu JQ (Liu, Jun-Qi)
;
Liu FQ (Liu, Feng-Qi)
;
Ye XL (Ye, Xiao-Ling)
;
Xu B (Xu, Bo)
;
Wang ZG (Wang, Zhan-Guo)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/03/26
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows
期刊论文
applied physics a: materials science and processing, 2011, 页码: 1-5
Jia, C.H.
;
Chen, Y.H.
;
Zhang, B.
;
Liu, X.L.
;
Yang, S.Y.
;
Zhang, W.F.
;
Wang, Z.G.
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  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Absorption
Absorption spectroscopy
Crystal atomic structure
Epitaxial growth
Metallorganic chemical vapor deposition
Optical properties
Organic chemicals
Strontium alloys
Strontium titanates
X ray diffraction
Zinc sulfide
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802
Li LG (Li Li-Gong)
;
Liu SM (Liu Shu-Man)
;
Luo S (Luo Shuai)
;
Yang T (Yang Tao)
;
Wang LJ (Wang Li-Jun)
;
Liu FQ (Liu Feng-Qi)
;
Ye XL (Ye Xiao-Ling)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2012/02/21
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y
;
Wang XL
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
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  |  
浏览/下载:35/0
  |  
提交时间:2012/01/06
ALGAN/GAN/INGAN/GAN DH-HEMTS
FIELD-EFFECT TRANSISTORS
ALGAN/GAN
POLARIZATION
PASSIVATION
HFETS
GHZ
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