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CORC

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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Abatement of waste gases and water during the processes of semiconductor fabrication 期刊论文
journal of environmental sciences-china, 2002, 卷号: 14, 期号: 4, 页码: 482-488
Wen RM; Liang JW
收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12
Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 4, 页码: 355-359
Zhang MH; Han YJ; Zhang YH; Huang Q; Bao CL; Wang WX; Zhou JM; Lu LW
收藏  |  浏览/下载：66/0  |  提交时间：2010/08/12
Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 351-354
Zhang YH; Lu LW; Zhang MH; Huang Q; Bao CL; Zhou JM
收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文
5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998
Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W
收藏  |  浏览/下载：24/0  |  提交时间：2010/10/29
Stoichiometric defects in semi-insulating GaAs 期刊论文
journal of crystal growth, 1997, 卷号: 173, 期号: 0, 页码: 325-329
Chen NF; He HJ; Wang YT; Lin LY
收藏  |  浏览/下载：7/0  |  提交时间：2010/11/17
Rapid thermal annealing of arsenic implanted Si1-xGex epilayers 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1997, 卷号: 122, 期号: 4, 页码: 639-642
Zou LF; Wang ZG; Sun DZ; Fan TW; Liu XF; Zhang JW
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17
Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures 期刊论文
science in china series a-mathematics physics astronomy, 1997, 卷号: 40, 期号: 2, 页码: 214-218
Chen NF; He HJ; Wang YT; Lin LY
收藏  |  浏览/下载：19/0  |  提交时间：2010/11/17
Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy 期刊论文
japanese journal of applied physics part 2-letters, 1996, 卷号: 35, 期号: 10a, 页码: l1238-l1240
Chen NF; Wang YT; He HJ; Lin LY
收藏  |  浏览/下载：18/0  |  提交时间：2010/11/17
Liquid encapsulated-melt zone processing of GaAs 期刊论文
chinese physics letters, 1996, 卷号: 13, 期号: 12, 页码: 950-952
Zhou BJ; Chen WH; Jensen E; Amini A; Abbaschian R
收藏  |  浏览/下载：18/0  |  提交时间：2010/11/17

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