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Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping 期刊论文
Physical Chemistry Chemical Physics, 2022, 卷号: 24, 期号: 9, 页码: 5529-5538
作者:  S. Q. Lu;  T. C. Zheng;  K. Jiang;  X. J. Sun;  D. B. Li
收藏  |  浏览/下载:2/0  |  提交时间:2023/06/14
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides 期刊论文
Light: Science and Applications, 2021, 卷号: 10, 期号: 1
作者:  K. Jiang;  X. Sun;  Z. Shi;  H. Zang;  J. Ben
收藏  |  浏览/下载:9/0  |  提交时间:2022/06/13
Strengthening mechanism of TiC/Al composites using Al-Ti-C/CNTs with doping alloying elements (Mg, Zn and Cu) 期刊论文
Journal of Materials Research and Technology-Jmr&T, 2020, 卷号: 9, 期号: 3, 页码: 6475-6487
作者:  H. Y. Yang,X. Yue,Z. Wang,Y. Shao and S. L. Shu
收藏  |  浏览/下载:3/0  |  提交时间:2021/07/06
Efficient Super Broadband NIR Ca2LuZr2Al3O12:Cr3+,Yb3+ Garnet Phosphor for pc-LED Light Source toward NIR Spectroscopy Applications 期刊论文
Advanced Optical Materials, 2020, 卷号: 8, 期号: 6, 页码: 7
作者:  S. He,L. L. Zhang,H. Wu,H. J. Wu,G. H. Pan,Z. D. Hao,X. Zhang,L. G. Zhang,H. Zhang and J. H. Zhang
收藏  |  浏览/下载:3/0  |  提交时间:2021/07/06
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
收藏  |  浏览/下载:2/0  |  提交时间:2021/07/06
Cr3+-Doped Broadband NIR Garnet Phosphor with Enhanced Luminescence and its Application in NIR Spectroscopy 期刊论文
Advanced Optical Materials, 2019, 卷号: 7, 期号: 12, 页码: 8
作者:  L.L.Zhang;  D.D.Wang;  Z.D.Hao;  X.Zhang;  G.H.Pan
收藏  |  浏览/下载:3/0  |  提交时间:2020/08/24
Influence of NaErF4@NaYF4 nanoparticles doping on performances of Cu2ZnSn(S,Se)(4) solar cell 期刊论文
Solar Energy Materials and Solar Cells, 2019, 卷号: 203, 页码: 7
作者:  D.Liu;  X.H.Zhang;  W.Qin;  B.Yao;  L.P.Tu
收藏  |  浏览/下载:1/0  |  提交时间:2020/08/24
Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface 期刊论文
Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 35, 页码: 31851-31859
作者:  Y.P.Song;  B.Yao;  Y.F.Li;  Z.H.Ding;  H.H.Sun
收藏  |  浏览/下载:4/0  |  提交时间:2020/08/24
Influence of gadolinium doping on low- and high-order nonlinear optical properties and transient absorption dynamics of ZnO nanomaterials 期刊论文
Optical Materials, 2019, 卷号: 95, 页码: 9
作者:  M.Venkatesh;  R.A.Ganeev;  K.S.Rao;  G.S.Boltaev;  K.Zhang
收藏  |  浏览/下载:1/0  |  提交时间:2020/08/24
Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus 期刊论文
Physical Review B, 2017, 卷号: 96, 期号: 15
作者:  Wang, D.;  D. Han;  X. B. Li;  N. K. Chen;  D. West
收藏  |  浏览/下载:17/0  |  提交时间:2018/06/13


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