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A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations 期刊论文
JOURNAL OF COMPUTATIONAL PHYSICS, 2022, 卷号: 458, 页码: 24
作者:  Zhang, Qianru;  Wang, Qin;  Zhang, Linbo;  Lu, Benzhuo
收藏  |  浏览/下载:6/0  |  提交时间:2023/02/07
A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 卷号: 68, 期号: 4, 页码: 1093-1097
作者:  Liu, Xifeng;  Liang, Shan;  Liu, Wenju;  Sun, Ping
收藏  |  浏览/下载:15/0  |  提交时间:2021/05/17
Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier 期刊论文
ACTA PHYSICA SINICA, 2021, 卷号: 70
作者:  Xu Da-Lin;  Wang Yu-Qi;  Li Xin-Hua;  Shi Tong-Fei
收藏  |  浏览/下载:44/0  |  提交时间:2021/04/26
A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 987
作者:  Fang, Yuman;  Gou, Yongsheng;  Zhang, Minrui;  Wang, Junfeng;  Tian, Jinshou
收藏  |  浏览/下载:22/0  |  提交时间:2021/01/28
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文
Guilin, China, June 4-6, 2021
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Xie C(谢闯);  Yang ZJ(杨志家)
收藏  |  浏览/下载:11/0  |  提交时间:2022/02/04
Single-event induced failure mode of PWM in DC/DC converter 期刊论文
MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 页码: 6
作者:  Gao, J.;  Li, C.;  Li, B.;  Li, B.;  Zhao, F.
收藏  |  浏览/下载:6/0  |  提交时间:2021/12/13
Modeling of a Smart Nano Force Sensor Using Finite Elements and Neural Networks 期刊论文
International Journal of Automation and Computing, 2020, 卷号: 17, 期号: 2, 页码: 279-291
作者:  Farid Menacer;  Abdelmalek Kadr;  Zohir Dibi
收藏  |  浏览/下载:9/0  |  提交时间:2021/02/22
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]
收藏  |  浏览/下载:39/0  |  提交时间:2020/12/11
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载:15/0  |  提交时间:2020/07/11
Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect 会议论文
Zhangjiajie, China, April 24-26, 2020
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Yang ZJ(杨志家);  Zhang ZP(张志鹏)
收藏  |  浏览/下载:7/0  |  提交时间:2020/08/01


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