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Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文
CHINESE PHYSICS, 2005, 卷号: 14, 期号: 3, 页码: 565-570
Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K; Zhang, EX; Yi, WB; Chen, M; Wang, X
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/24
Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 2, 页码: 273-276
Zhang, NL; Song, ZT; Shen, QW; Lin, CL
收藏  |  浏览/下载:7/0  |  提交时间:2012/03/24


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