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科研机构
半导体研究所 [27]
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期刊论文 [21]
会议论文 [6]
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2017 [1]
2011 [2]
2010 [1]
2007 [2]
2006 [2]
2005 [1]
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半导体材料 [27]
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Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition
期刊论文
ACS Applied Materials & Interfaces, 2017, 卷号: 9, 期号: 44, 页码: 38662-38669
作者:
Hong-Yan Chen
;
Hong-Liang Lu
;
Jin-Xin Chen
;
Feng Zhang
;
Xin-Ming Ji
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2018/06/15
Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 11, 页码: 113509
Shi K (Shi K.)
;
Zhang PF (Zhang P. F.)
;
Wei HY (Wei H. Y.)
;
Jiao CM (Jiao C. M.)
;
Jin P (Jin P.)
;
Liu XL (Liu X. L.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/02/22
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:
Pan X
;
Hou QF
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  |  
浏览/下载:83/7
  |  
提交时间:2011/07/05
ELECTRON-MOBILITY TRANSISTORS
AL-CONTENT
STRESS-CONTROL
PHASE EPITAXY
ALGAN
BUFFER
LAYERS
HETEROSTRUCTURES
INTERLAYERS
SILICON
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
Effect of growth conditions on the GaN thin film by sputtering deposition
期刊论文
journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 268-271
Zhang CG
;
Bian LF
;
Chen WD
;
Hsu CC
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  |  
浏览/下载:61/0
  |  
提交时间:2010/03/29
phase equilibria
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao)
;
Wang XL (Wang Xiaoliang)
;
Xiao HL (Xiao Hongling)
;
Hu GX (Hu Guoxin)
;
Wang CM (Wang Cuimei)
;
Wang XY (Wang Xiaoyan)
;
Li JP (Li Jianping)
;
Wang JX (Wang Junxi)
;
Li CJ (Li Chengji)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang Zanguo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
deep defect
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
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  |  
浏览/下载:209/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
收藏
  |  
浏览/下载:95/18
  |  
提交时间:2010/03/29
ZnO
MOCVD
thermal annealing
photoluminescence
x-ray diffraction
atomic force microscopy
PULSED-LASER DEPOSITION
THIN-FILMS
PHOTOLUMINESCENCE
MECHANISMS
EPITAXY
CVD
SI
Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition
期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2081-2083
Lu LW
;
Chen TJ
;
Shen B
;
Wang JN
;
Ge WK
收藏
  |  
浏览/下载:65/32
  |  
提交时间:2010/03/17
MOLECULAR-BEAM EPITAXY
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
作者:
Jiang DS
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  |  
浏览/下载:55/0
  |  
提交时间:2010/08/12
interdiffusion
post-annealing
quantum wells
GaInNAs/GaAs
MOLECULAR-BEAM EPITAXY
CARRIER LOCALIZATION
GAINNAS
LUMINESCENCE
ORIGIN
GAASN
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