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Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017802
作者:  Jin P
收藏  |  浏览/下载：167/34  |  提交时间：2010/03/08
A lattice dynamical treatment for the total potential energy of single-walled carbon nanotubes and its applications: relaxed equilibrium structure, elastic properties, and vibrational modes of ultra-narrow tubes 期刊论文
journal of physics-condensed matter, 2008, 卷号: 20, 期号: 4, 页码: art. no. 045228
Jiang, JW; Tang, H; Wang, BS; Su, ZB
收藏  |  浏览/下载：114/3  |  提交时间：2010/03/08
Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 489-492
Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD
收藏  |  浏览/下载：235/9  |  提交时间：2010/04/11
As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.043704
Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Yang F (Yang Fei); Peng CT (Peng Changtao); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming)
收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11
Green-light-emitting ZnSe nanowires fabricated via vapor phase growth 期刊论文
applied physics letters, 2003, 卷号: 82, 期号: 19, 页码: 3330-3332
Xiang B; Zhang HZ; Li GH; Yang FH; Su FH; Wang RM; Xu J; Lu GW; Sun XC; Zhao Q; Yu DP
收藏  |  浏览/下载：111/0  |  提交时间：2010/08/12
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
作者:  Zhao DG
收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12
Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 3, 页码: 443-444
Gao F; Li GH; Zhang JH; Qin FG; Yao ZY; Liu ZK; Wang ZG; Lin LY
收藏  |  浏览/下载：105/9  |  提交时间：2010/08/12
Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419
作者:  Han PD
收藏  |  浏览/下载：84/7  |  提交时间：2010/08/12
Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 25, 页码: 3974-3976
作者:  Han PD
收藏  |  浏览/下载：76/9  |  提交时间：2010/08/12
Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511
Sheng SR; Liao XB; Kong GL
收藏  |  浏览/下载：103/17  |  提交时间：2010/08/12

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