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科研机构
半导体研究所 [41]
内容类型
期刊论文 [39]
会议论文 [2]
发表日期
2011 [3]
2010 [3]
2009 [5]
2008 [5]
2007 [4]
2006 [7]
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半导体材料 [41]
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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
期刊论文
physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.121302
Plumhof JD
;
Krapek V
;
Ding F
;
Jons KD
;
Hafenbrak R
;
Klenovsky P
;
Herklotz A
;
Dorr K
;
Michler P
;
Rastelli A
;
Schmidt OG
收藏
  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
ENTANGLED PHOTON PAIRS
SEMICONDUCTOR
SPIN
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F
;
Li B
;
Akopian N
;
Perinetti U
;
Chen YH
;
Peeters FM
;
Rastelli A
;
Zwiller V
;
Schmidt OG
收藏
  |  
浏览/下载:71/5
  |  
提交时间:2011/07/05
Quantum Ring
Quantum Dot
Neutral Exciton
Aharonov Bohm Effect
Gate Controlled
Selective Etching
ENERGY-SPECTRA
Phonon and Elastic Instabilities in Zincblende TlN under Hydrostatic Pressure from First Principles Calculations
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 10, 页码: 100503
Shi, LW
;
Duan, YF
;
Yang, XQ
;
Tang, G
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  |  
浏览/下载:7/0
  |  
提交时间:2012/02/06
AB-INITIO
STATE PROPERTIES
V COMPOUNDS
1ST-PRINCIPLES
NITRIDE
BCC
Gate controlled Aharonov-Bohm-type oscillations from single neutral excitons in quantum rings
期刊论文
physical review b, 2010, 卷号: 82, 期号: 7, 页码: art. no. 075309
Ding F (Ding F.)
;
Akopian N (Akopian N.)
;
Li B (Li B.)
;
Perinetti U (Perinetti U.)
;
Govorov A (Govorov A.)
;
Peeters FM (Peeters F. M.)
;
Bufon CCB (Bufon C. C. Bof)
;
Deneke C (Deneke C.)
;
Chen YH (Chen Y. H.)
;
Rastelli A (Rastelli A.)
;
Schmidt OG (Schmidt O. G.)
;
Zwiller V (Zwiller V.)
收藏
  |  
浏览/下载:185/34
  |  
提交时间:2010/09/07
ENERGY-SPECTRA
Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104
Hao GD (Hao Guo-Dong)
;
Chen YH (Chen Yong-Hai)
;
Fan YM (Fan Ya-Ming)
;
Huang XH (Huang Xiao-Hui)
;
Wang HB (Wang Huai-Bing)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/12/28
LIGHT-EMITTING-DIODES
WURTZITE SEMICONDUCTORS
QUANTUM-WELLS
MATRIX-ELEMENTS
SEMIPOLAR
SAPPHIRE
In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516
Yu JL (Yu J. L.)
;
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Jiang CY (Jiang C. Y.)
;
Jia CH (Jia C. H.)
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  |  
浏览/下载:293/18
  |  
提交时间:2010/08/17
MOLECULAR-BEAM EPITAXY
STRAIN RELAXATION
GROWTH TEMPERATURE
INTERFACE
ALLOYS
GAAS
HETEROSTRUCTURES
MICROSTRUCTURE
GANXAS1-X
NITROGEN
Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 9, 页码: art. no. 095305
作者:
Jia CH
;
Zhou XL
收藏
  |  
浏览/下载:171/27
  |  
提交时间:2010/03/08
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer
期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:
Liu J
;
Zhu H
收藏
  |  
浏览/下载:73/2
  |  
提交时间:2010/03/08
HEMT
2DEG
Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:
Song HP
;
Zhang B
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/04
aluminium compounds
effective mass
gallium arsenide
III-V semiconductors
SCF calculations
semiconductor quantum wires
spectral line shift
EXCHANGE INTERACTION
ENERGY
STATES
ABSORPTION
NANOWIRES
ELECTRONS
SUBBANDS
WELLS
FIELD
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2010/03/08
aluminium compounds
gallium arsenide
III-V semiconductors
internal stresses
reflectivity
semiconductor heterojunctions
semiconductor quantum wells
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