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科研机构
半导体研究所 [7]
物理研究所 [6]
力学研究所 [2]
北京大学 [2]
上海光学精密机械研究... [2]
兰州化学物理研究所 [2]
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期刊论文 [23]
会议论文 [3]
学位论文 [1]
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2007 [27]
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半导体材料 [2]
材料科学与物理化学 [2]
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Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy
期刊论文
Chinese physics letters, 2007, 卷号: 24, 期号: 12, 页码: 3543-3546
作者:
Wu Bing-Peng
;
Wu Dong-Hai
;
Ni Hai-Qiao
;
Huang She-Song
;
Zhan Feng
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/05/12
Study of multi-fractal spectrum of sol-gel hydrophobic anti-reflective sio2 coating after laser-conditioning
期刊论文
Acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 3833-3838
作者:
Zhang Lei
;
Xu Yao
;
Jiang Xiao-Dong
;
Lang Li-Ping
;
Lue Hai-Bin
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/10
Sio(2) ar coating
Laser-conditioning
Mfs
Lidt
Growth of a novel periodic structure of sic/aln multilayers by low pressure chemical vapour deposition
期刊论文
Chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1753-1755
作者:
Zhao Yong-Mei
;
Sun Guo-Sheng
;
Li Jia-Ye
;
Liu Xing-Fang
;
Wang Lei
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
Suppression of pinhole defects in fullerene molecular electron beam resists
期刊论文
MICROELECTRONIC ENGINEERING, 2007, 卷号: 84, 期号: 5-8, 页码: 1066-1070
作者:
Chen, X.
;
Robinson, A. P. G.
;
Manickam, M.
;
Preece, J. A.
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  |  
浏览/下载:7/0
  |  
提交时间:2015/09/21
molecular resist
fullerene
electron beam lithography
pinholes
High-quality GaN films grown on surface treated sapphire substrate
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1108-1112
作者:
Peng, D. S.
;
Feng, Y. C.
;
Wang, W. X.
;
Liu, X. F.
;
Shi, W.
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  |  
浏览/下载:9/0
  |  
提交时间:2015/08/20
Growth of gasb layers on gaas (001) substrate by molecular beam epitaxy
期刊论文
Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1080-1084
作者:
Hao, Ruiting
;
Xu, Yingqiang
;
Zhou, Zhiqiang
;
Ren, Zhengwei
;
Ni, Haiqiao
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
A comparison between aln films grown by mocvd using dimethylethylamine alane and trimethylaluminium as the aluminium precursors
期刊论文
Chinese physics letters, 2007, 卷号: 24, 期号: 2, 页码: 516-518
作者:
Hu Wei-Guo
;
Liu Xiang-Lin
;
Zhang Pan-Feng
;
Zhao Feng-Ai
;
Jiao Chun-Mei
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/12
Superhydrophobic zinc oxide surface by differential etching and hydrophobic modification
期刊论文
Materials Science and Engineering A, 2007, 卷号: 452-453, 页码: 732-736
作者:
Zhou F(周峰)
;
Liu WM(刘维民)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/11/01
ZnO
Superhydrophobic surface
Differential etching
ODT
Fabrication of superhydrophobic copper by wet chemical reaction
期刊论文
Thin Solid Films, 2007, 卷号: 515, 页码: 7190-7194
作者:
Guo ZG(郭志光)
;
Liu WM(刘维民)
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  |  
浏览/下载:12/0
  |  
提交时间:2013/11/01
Copper substrate
Water contact angle
Superhydrophobic
Wet chemical reaction
Fabrication technique of large-scale lightweight SiC space mirror (EI CONFERENCE)
会议论文
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Large Mirrors and Telescopes, July 8, 2007 - July 12, 2007, Chengdu, China
Zhang G.
;
Zhao R.
;
Zhao W.
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2013/03/25
Silicon carbide (SiC) is a new type candidate material for large-scale lightweight space mirror. Its low thermal distortion
high stiffness
high optical quality
and its dimensional stability are better than other traditional optical substrate materials such as ULE
Zerodure
Beryllium (Be) and so on. In this paper
the lightweight silicon carbide space mirror blank was fabricated by reaction sintering. As a space born mirror material
silicon carbide must be an optical grade ceramic. So we prepared the silicon carbide green body with gel-casting method. Then some carbon materials were supplemented into the green body which will bring reaction-sintering with silicon in a vacuum furnace during 1500-1600C
ultimately the reaction bonded silicon carbide was made. The diameter of SiC space mirror blank we have made is 680mm. If expanding the size of the vacuum furnace
bigger mirror blank can be obtained. The test results show that the mechanical and thermal properties of RB-SiC are excellent with bending strength of 350MPa
fracture toughness of 4.1 MPa·m1/2 and coefficient of thermal expansion(CET) of 2.6710-6/K. The surface roughness(RMS) could be better than 3nm.
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