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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018
作者:  Zhu, J. J.;  Liang, F.;  Liu, W.;  Zhang, L. Q.(张立群);  Liu, S. T.
收藏  |  浏览/下载：49/0  |  提交时间：2019/03/27
Enhancement of plasmon-photon coupling in grating coupled graphene inside a Fabry-Perot cavity 期刊论文
SOLID STATE COMMUNICATIONS, 2018
作者:  Zhao, C. X.;  Peeters, F. M.;  Xu, W.;  Dong, H. M.;  Qin, H.(秦华)
收藏  |  浏览/下载：61/0  |  提交时间：2019/03/27
Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017
作者:  Liu, S. T.;  Yang, J.;  Zhao, D. G.;  Jiang, D. S.;  Liang, F.
收藏  |  浏览/下载：14/0  |  提交时间：2018/02/05
Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017
作者:  Yang, J.;  Zhao, D. G.;  Jiang, D. S.;  Chen, P.;  Zhu, J. J.
收藏  |  浏览/下载：9/0  |  提交时间：2018/02/05
Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP ADVANCES, 2017
作者:  Chen, P.;  Zhao, D. G.;  Jiang, D. S.;  Long, H.;  Li, M.
收藏  |  浏览/下载：18/0  |  提交时间：2018/02/05
Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
SCIENTIFIC REPORTS, 2017
作者:  Yang, J.;  Zhao, D. G.;  Jiang, D. S.;  Chen, P.;  Zhu, J. J.
收藏  |  浏览/下载：10/0  |  提交时间：2018/02/05
Fabrication of pH-responsive PLGA(UCNPs/DOX) nanocapsules with upconversion luminescence for drug delivery 期刊论文
SCIENTIFIC REPORTS, 2017
作者:  Zhao, JW（赵军伟);  Yang, H(杨辉);  Li, JL;  Wang, YJ;  Wang, X
收藏  |  浏览/下载：12/0  |  提交时间：2018/02/05
Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Materials Technology, 2016
作者:  Liang, F.;  Chen, P.;  Zhao, D.G.;  Jiang, D.S.;  Liu, Z.S.
收藏  |  浏览/下载：12/0  |  提交时间：2017/03/11
The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 卷号: 213, 期号: 8
作者:  Li, X;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/11
Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 96
作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11

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