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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：大连理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate 期刊论文 APPLIED PHYSICS LETTERS, 2014, 卷号: 104 作者:  Zhang, Kexiong;  Liang, Hongwei;  Shen, Rensheng;  Wang, Dongsheng;  Tao, Pengcheng 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09 Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001) 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2014, 卷号: 70, 页码: 54-60 作者:  Wang, Dongsheng;  Liang, Hongwei;  Tao, Pengcheng;  Zhang, Kexiong;  Song, Shiwei 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/09 Distributed Bragg reflectors  Metal organic vapor phase epitaxy  Double AlN/AlGaN layer buffer  Ultraviolet   Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate 期刊论文 SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6322 作者:  Zhang, Kexiong;  Liang, Hongwei;  Liu, Yang;  Shen, Rensheng;  Guo, Wenping 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09 The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal-organic chemical vapor deposition on sapphire substrate 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 卷号: 64, 页码: 57-62 作者:  Zhang, Kexiong;  Liang, Hongwei;  Wang, Dongsheng;  Shen, Rensheng;  Guo, Wenping 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09 III-nitrides  Reversed polarization LEDs  P-side down structure  Yellow emission   Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 卷号: 116, 页码: 1561-1566 作者:  Zhang, Kexiong;  Liang, Hongwei;  Shen, Rensheng;  Song, Shiwei;  Wang, Dongsheng 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/09 The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 卷号: 25, 页码: 4268-4272 作者:  Tao, Pengcheng;  Liang, Hongwei;  Xia, Xiaochuan;  Feng, Qiuju;  Wang, Dongsheng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/09 Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 卷号: 27, 页码: 841-845 作者:  Tao, Pengcheng;  Liang, Hongwei;  Wang, Dongsheng;  Xia, Xiaochuan;  Feng, Qiuju 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09 Distributed Bragg reflectors  Silicon carbide  Ultraviolet  Metal-organic chemical vapor deposition   Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 卷号: 24, 页码: 3299-3302 作者:  Song, Shiwei;  Shen, Rensheng;  Liang, Hongwei;  Liu, Yang;  Xia, Xiaochuan 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/11