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Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: 10
作者:  Jiang, Xiang-Wei;  Li, Shu-Shen;  Xia, Jian-Bai;  Wang, Lin-Wang
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: 5
作者:  Wang, Y.;  Jiang, Y.;  Zhang, X. W.;  Yin, Z. G.
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14
Transport properties in a gated heterostructure with a trapezoidal alxga1-xas barrier layer 期刊论文
Physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Tan, X. T.;  Zheng, H. Z.;  Liu, J.;  Zhu, H.;  Xu, P.
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Hemt  2deg  
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1654-1656
作者:  Zhang Yang;  Zhang Renping
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23
A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文
Chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426
作者:  Ma Long;  Huang Ying-Long;  Zhang Yang;  Yang Fu-Hua;  Wang Liang-Chen
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426
Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Yang FH (Yang Fu-Hua); Wang LC (Wang Liang-Chen)
收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文
chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570
Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17

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