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Terahertz focal plane imaging array sensor based on AlGaN/GaN field effect transistors 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2018
作者:  Zhang, Zhipeng(张志鹏);  Zhou, Jianyong;  Qin, Hua(秦华);  Li, Xiang;  Chen, Yang
收藏  |  浏览/下载：60/0  |  提交时间：2019/03/27
Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018
作者:  Liu, Zhongyuan;  Yang, Ruilong;  Lv, Weiming;  Yang, Bingchao;  Wang, Bochong
收藏  |  浏览/下载：41/0  |  提交时间：2019/03/27
Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018
作者:  Xiang, Jianyong;  Zhao, Zhisheng;  Tian, Yongjun;  Liu, Zhongyuan;  Zeng, Zhongming(曾中明)
收藏  |  浏览/下载：33/0  |  提交时间：2019/03/27
Room-temperature direct and heterodyne detectors based on field-effect transistors 期刊论文
27th International Symposium on Space Terahertz Technology, ISSTT 2016, 2017
作者:  Qin, H.(秦华);  Sun, J.D.(孙建东);  Luo, M.C.;  Liang, S.X.;  Yu, C.
收藏  |  浏览/下载：18/0  |  提交时间：2018/02/06
Detection of incoherent terahertz light using antenna-coupled high-electron-mobility field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2017
作者:  Qin, Hua(秦华);  Li, Xiang(李想);  Sun, Jiandong(孙建东);  Zhang, Zhipeng(张志鹏);  Sun, Yunfei(孙云飞)
收藏  |  浏览/下载：21/0  |  提交时间：2018/02/05
GaN high electron mobility transistors with AlInN back barriers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 662
作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer 期刊论文
NANOTECHNOLOGY, 2016, 卷号: 27, 期号: 36
作者:  Wu, GJ;  Wang, XD;  Wang, P;  Huang, H;  Chen, Y
收藏  |  浏览/下载：75/0  |  提交时间：2017/03/11
Plasmonic terahertz modulator based on a grating-coupled two-dimensional electron system 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 20
作者:  Huang, YD(黄永丹);  Yu, Y(余耀);  Qin, H(秦华);  Sun, JD(孙建东);  Zhang, ZP(张志鹏)
收藏  |  浏览/下载：37/0  |  提交时间：2017/03/11
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 2
作者:  Shi, YJ;  Huang, S;  Bao, QL;  Wang, XH;  Wei, K
收藏  |  浏览/下载：43/0  |  提交时间：2017/03/11
Performance improvement for printed indium gallium zinc oxide thin-film transistors with a preheating process 期刊论文
RSC ADVANCES, 2016, 卷号: 6, 期号: 47
作者:  Xie, ML(谢美兰);  Wu, SJ(吴绍静);  Chen, Z(陈征);  Khan, Q;  Wu, XZ(吴馨洲)
收藏  |  浏览/下载：36/0  |  提交时间：2017/03/11

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