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北京航空航天大学 [28]
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期刊论文 [19]
会议论文 [9]
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2019 [3]
2018 [7]
2017 [5]
2016 [4]
2014 [4]
2012 [3]
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专题:北京航空航天大学
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Analysis and Modeling of SiC JFET Bi-Directional Switches Parasitic Oscillation
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: 34, 页码: 8613-8625
作者:
Wang, Lina
;
Yang, Junyi
;
Ma, Haobo
;
Wang, Zeyuan
;
Olanrewaju, Kabir Oladele
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/12/30
Bi-directional switches (BDSs)
equivalent circuit model
ferrite ring
silicon carbide junction field-effect transistor (SiC JFET)
snubber capacitors
Identification of damage mechanisms of carbon fiber reinforced silicon carbide composites under static loading using acoustic emission monitoring
期刊论文
CERAMICS INTERNATIONAL, 2019, 卷号: 45, 页码: 13847-13858
作者:
Yong, Gao
;
Denghong, Xiao
;
Tian, He
;
Ye, Lin
;
Naitian, Li
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/30
Fiber reinforced ceramic matrix composites
Static test
Acoustic emission
K-means cluster
Digital image correlation
Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives [Si和SiC功率器件结温提取技术现状及展望]
期刊论文
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2019, 卷号: 34, 页码: 703-716
作者:
Wang, L.
;
Deng, J.
;
Yang, J.
;
Li, W.
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/30
Extraction
Junction gate field effect transistors
Semiconductor junctions
Silicon
Silicon carbide
Wide band gap semiconductors
Health assessments
Intelligent switching
Junction temperatures
Measuring frequency
Online extraction
Reverse breakdown voltage
Temperature characteristic
Temperature sensitive
Power semiconductor devices
Ultrasonic vibration mill-grinding of single-crystal silicon carbide for pressure sensor diaphragms
期刊论文
CERAMICS INTERNATIONAL, 2018, 卷号: 44, 页码: 3107-3112
作者:
Li, Jian
;
Geng, Daxi
;
Zhang, Deyuan
;
Qin, Wei
;
Jiang, Yonggang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/30
Silicon carbide
Ultrasonic vibration
Mill-grinding
Diaphragm
Pressure sensor
Analytical and Experimental Evaluation of SiC-Inverter Nonlinearities for Traction Drives Used in Electric Vehicles
期刊论文
IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, 2018, 卷号: 67, 页码: 146-159
作者:
Ding, Xiaofeng
;
Du, Min
;
Duan, Chongwei
;
Guo, Hong
;
Xiong, Rui
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/30
Efficiency
electric vehicles (EVs)
inverter nonlinearity
silicon (Si)
silicon carbide (SiC)
voltage distortion
In-Situ Chemical Vapor Growth of Carbon-Rich Silicon Carbide Fibers Upon Pyrolysis of Polyzirconosilane
期刊论文
SILICON, 2018, 卷号: 10, 页码: 59-65
作者:
Wang, Mingcun
;
Huang, Chuanjin
;
Wang, Zhehui
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Polyzirconosilane
Chemical vapor growth
Silicon carbide
Fibers
Design of SiC-Based Single-Phase Quasi-Z-Source Inverter
会议论文
PROCEEDINGS 2018 IEEE 12TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG 2018), 2018-01-01
作者:
Liu, Yushan
;
Abu-Rub, Haitham
;
Wu, Yichang
;
Ghazi, Khalid Ahamed
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/30
Silicon carbide
single-phase inverter
quasi-Z-source inverter
switching frequency
power density
Development of Auto Infrared Photoelastic Microscope for Stress Measurement of Silicon
会议论文
Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
作者:
Li, T.
;
Yao, R.
;
Yu, C.
;
Su, F.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Cracks
Elasticity
Electronics packaging
Light polarization
Microscopes
Optical devices
Silicon carbide
Silicon wafers
Stresses
Wafer bonding
Wide band gap semiconductors
Electronic Packaging
Heating platform
Phase difference
Quarter wave-plate
Si-based materials
Silicon-based materials
Stress birefringence
Temperature cycling tests
Three dimensional integrated circuits
An Improved Active Gate Drive Method for SiC MOSFET Better Switching Performance
会议论文
Proceedings of 2018 IEEE 3rd Advanced Information Technology, Electronic and Automation Control Conference, IAEAC 2018
作者:
Xu, C.
;
Ma, Q.
;
Xu, P.
;
Cui, T.
;
Zhang, P.
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
Electromagnetic pulse
Silicon carbide
SPICE
Switching
Threshold voltage
Active gate drives
Circuit elements
Gate resistance
SiC MOSFET
Supply voltages
Switching loss
Switching performance
Theoretical derivations
MOSFET devices
An Active Voltage Controller of SiC MOSFET for Reduced EMI Generation
会议论文
Proceedings of 2018 IEEE 3rd Advanced Information Technology, Electronic and Automation Control Conference, IAEAC 2018
作者:
Yang, J.
;
Shi, J.
;
Cui, T.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Electromagnetic pulse
Silicon carbide
Switching
Voltage control
Active voltage controls
Gaussian waveforms
High frequency HF
Performance improvements
SiC MOSFET
Suppression effects
Switching dynamics
Switching transient
MOSFET devices
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