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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The surface passivation on the optical and surface properties of InP 会议论文 12th China International Nanoscience and Technology Symposium, and the Nano-Products Exposition, CINSTS 2013, October 27, 2013 - October 31, 2013, Chengdu, China Gao X.; Wei Z. P.; Fang D.; Zhao H. F.; Fang X.; Tian S. S.; Tang J. L.; Du P.; Chu X. Y.; Li J. H.; Fang F.; Wang X. H. 收藏  |  浏览/下载：19/0  |  提交时间：2015/04/27 The facet passivation characteristic of 940nm semiconductor laser 会议论文 2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, December 1, 2013 - December 2, 2013, Singapore Li Z. J.; Zheng X. G.; Li T.; Qu Y.; Bo B. X.; Liu G. J.; Ma X. H.; Wang M. 收藏  |  浏览/下载：17/0  |  提交时间：2015/04/27 High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Ning Y. Q.; Qin L.; Sun Y. F.; Li T.; Cui J. J.; Peng B.; Liu G. Y.; Zhang Y.; Liu Y.; Wang L. J.; Cui D. F.; Xu Z. Y. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.