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200 nm gate-length GaAs-based MHEMT devices by electron beam lithography 外文期刊
2008
作者:  Xu, JB;  Zhang, HY;  Wang, WX;  Liu, L;  Li, M
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/26
Lmds  
Deposition of SiOx films with a capacitively-coupled plasma at atmospheric pressure 外文期刊
2007
作者:  Xu, XY;  Li, L;  Wang, SG;  Zhao, LL;  Ye, TC
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/26
Hole mobility enhancement of pMOSFETs with strain channel induced by ge pre-amorphization implantation for source/drain extension 外文期刊
2006
作者:  Xu, QX;  Duan, XF;  Qian, H;  Liu, HH;  Li, HO
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/26
Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction 外文期刊
2006
作者:  Liu, HH;  Duan, XF;  Qi, XY;  Xu, QX;  Li, HO
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/26
SOI technology for radio-frequency integrated-circuit applications 外文期刊
2006
作者:  Yang, R;  Qian, H;  Li, JF;  Xu, QX;  Hai, CH
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
Rf-cmos  Silicon  Ghz  
Damascene W/TiN gate MOSFETs with improved performance for 0.1-mu m regime 外文期刊
2002
作者:  Li, RZ;  Xu, QX
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/26


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