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A C-band GaN based linear power amplifier with 55.7% PAE 外文期刊
2010
作者:  Luo, WJ;  Liu, XY;  Zheng, YK;  Liu, GG;  Zhang, H
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/26
Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications 外文期刊
2010
作者:  Fu D, Xie D, Zhang CH, et al.
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/26
Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with f(max) of 305 GHz 外文期刊
2008
作者:  Jin, Z;  Su, Y;  Cheng, W;  Liu, X;  Xu, A
收藏  |  浏览/下载:19/0  |  提交时间:2010/11/26
Nonpolar nonvolatile resistive switching in Cu doped ZrO2 外文期刊
2008
作者:  Guan, WH;  Long, SB;  Liu, Q;  Liu, M;  Wang, W
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/26
Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application 外文期刊
2008
作者:  Liu, Q;  Guan, WH;  Long, SB;  Liu, M;  Zhang, S
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/26
Surface-recombination-free InGaAs/InP HBTs and the base contact recombination 外文期刊
2008
作者:  Jin, Z;  Liu, X;  Prost, W;  Tegude, FJ
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/26
Modeling of retention characteristics for metal and semiconductor nanocrystal memories 外文期刊
2007
作者:  Guan, WH;  Long, SB;  Liu, M;  Liu, Q;  Hu, Y
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/26


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