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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 9, 页码: 096105 DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei 收藏  |  浏览/下载：21/0  |  提交时间：2014/03/17 Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates 期刊论文 applied surface science, 2013, 卷号: 270, 页码: 301-306 Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo 收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17 Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources 期刊论文 materials, 2013, 卷号: 6, 期号: 4, 页码: 1543-1553 Liu, Xingfang; Sun, Guosheng; Liu, Bin; Yan, Guoguo; Guan, Min; Zhang, Yang; Zhang, Feng; Chen, Yu; Dong, Lin; Zheng, Liu; Liu, Shengbei; Tian, Lixin; Wang, Lei; Zhao, Wanshun; Zeng, Yiping 收藏  |  浏览/下载：27/0  |  提交时间：2013/08/27 Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates 期刊论文 applied surface science, 2013, 卷号: 270, 页码: 301-306 Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/17