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EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM 期刊论文
JOURNAL OF APPLIED PHYSICS, 1993, 卷号: 74, 期号: 3, 页码: 1700-1706
LIU, P; LI, BZ; SUN, Z; GU, ZG; HUANG, WN; ZHOU, ZY; NI, RS; LIN, CL; Zou, SC(邹世昌); HONG, F; ROZGONYI, GA
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