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科研机构
半导体研究所 [23]
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期刊论文 [21]
会议论文 [2]
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2010 [4]
2009 [4]
2008 [5]
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半导体物理 [23]
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Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films
期刊论文
journal of magnetism and magnetic materials, 2010, 卷号: 322, 期号: 21, 页码: 3250-3254
Chen L (Chen L.)
;
Yan S (Yan S.)
;
Xu PF (Xu P. F.)
;
Lu J (Lu J.)
;
Deng JJ (Deng J. J.)
;
Ji Y (Ji Y.)
;
Wang KY (Wang K. Y.)
;
Zhao JH (Zhao J. H.)
收藏
  |  
浏览/下载:90/4
  |  
提交时间:2010/09/07
Magnetic semiconductor
Magnetic anisotropy
Magneto-transport phenomenon
Molecular-beam epitaxy
Resonant subband Landau level coupling in symmetric quantum well
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.)
;
Wu XG (Wu X. -G.)
;
Pfeiffer LN (Pfeiffer L. N.)
;
West KW (West K. W.)
;
Wang YJ (Wang Y. -J.)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/12/05
TILTED MAGNETIC-FIELDS
ELECTRON-GAS
DEPOLARIZATION SHIFT
CYCLOTRON-RESONANCE
MATRIX-ELEMENTS
HETEROJUNCTIONS
SPECTROSCOPY
TECHNOLOGY
ABSORPTION
SYSTEMS
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108
Zhu YH (Zhu Yuan-Hui)
;
Xu Q (Xu Qiang)
;
Fan WJ (Fan Wei-Jun)
;
Wang JW (Wang Jian-Wei)
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  |  
浏览/下载:67/3
  |  
提交时间:2010/05/07
ALLOYS
GE
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
;
Peng HW (Peng Haowei)
;
Xia JB (Xia Jian-Bai)
;
Wang LW (Wang Lin-Wang)
;
Wei SH (Wei Su-Huai)
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  |  
浏览/下载:47/0
  |  
提交时间:2010/12/27
IMPURITIES
GAAS1-XNX
NITROGEN
GAINNAS
STATES
TRAPS
Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:213/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104
作者:
Zhu JJ
;
Zhang SM
;
Jiang DS
;
Zhao DG
;
Yang H
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  |  
浏览/下载:191/56
  |  
提交时间:2010/03/08
aluminium compounds
claddings
gallium compounds
III-V semiconductors
indium compounds
quantum well lasers
refractive index
waveguide lasers
Dyakonov-Perel spin relaxation in InSb/AlxIn(1-x)Sb quantum wells
期刊论文
physical review b, 2009, 卷号: 80, 期号: 15, 页码: art.no.153307
Li J (Li Jun)
;
Chang K (Chang Kai)
;
Peeters FM (Peeters F. M.)
收藏
  |  
浏览/下载:209/55
  |  
提交时间:2010/03/08
SEMICONDUCTORS
The electronic structure of strained ZnO/MgxZn1-xO superlattices and the influence of polarization
期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 3, 页码: 506-512
Xiong W
;
Li SS
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  |  
浏览/下载:167/41
  |  
提交时间:2010/03/08
ZnO
ZnO/MgxZn1-xO superlattice
Electronic structure
Polarization
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON
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