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科研机构
半导体研究所 [58]
内容类型
期刊论文 [51]
会议论文 [7]
发表日期
2014 [1]
2012 [2]
2011 [4]
2010 [3]
2009 [5]
2008 [3]
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半导体物理 [58]
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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm
期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 14, 页码: 143101
Fu, MQ
;
Pan, D
;
Yang, YJ
;
Shi, TW
;
Zhang, ZY
;
Zhao, JH
;
Xu, HQ
;
Chen, Q
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2015/03/20
Influence of indium cluster on the high and constant background electron density in ternary InxGa1-xN alloys
期刊论文
li c (li, chong); wu fm (wu, fengmin); li ss (li, shu-shen); xia jb (xia, jian-bai); li jb (li, jingbo), 2012, 卷号: 101, 期号: 6, 页码: 062102
Li C (Li, Chong)
;
Wu FM (Wu, Fengmin)
;
Li SS (Li, Shu-Shen)
;
Xia JB (Xia, Jian-Bai)
;
Li JB (Li, Jingbo)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2013/04/02
Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres
期刊论文
japanese journal of applied physics, 2012, 卷号: 51, 期号: 2,part 1, 页码: 20204
Zhang, YY
;
Li, J
;
Wei, TB
;
Liu, J
;
Yi, XY
;
Wang, GH
;
Yi, FT
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2013/03/17
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
收藏
  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊论文
optoelectronics letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Zhu, Yan
;
Ni, Hai-qiao
;
Wang, Hai-li
;
He, Ji-fang
;
Li, Mi-feng
;
Shang, Xiang-jun
;
Niu, Zhi-chuan
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/06/14
Epitaxial growth
Gallium arsenide
Growth(materials)
Molecular beam epitaxy
Semiconducting gallium
Semiconducting indium
Semiconductor quantum wells
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:33/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots
期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 11, 页码: 4841-4845
Deng HX (Deng Hui-Xiong)
;
Li SS (Li Shu-Shen)
;
Li JB (Li Jingbo)
收藏
  |  
浏览/下载:79/17
  |  
提交时间:2010/04/13
1ST-PRINCIPLES CALCULATIONS
MOLECULAR-DYNAMICS
INDIUM-PHOSPHIDE
EXCITON-STATES
SMALL PBSE
NANOCRYSTALS
PHOTOLUMINESCENCE
GENERATION
NANOWIRES
Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals
期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 41, 页码: 17569-17573
Meng XQ (Meng Xiuqing)
;
Tang LM (Tang Liming)
;
Li JB (Li Jingbo)
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/11/02
THIN-FILMS
QUANTUM DOTS
AB-INITIO
INDIUM
ZNO
SEMICONDUCTORS
ACTIVATION
OXIDATION
ELECTRON
ENERGY
Donor-donor binding in In2O3: Engineering shallow donor levels
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming)
;
Wang LL (Wang Ling-Ling)
;
Wang D (Wang Dan)
;
Liu JZ (Liu Jian-Zhe)
;
Chen KQ (Chen Ke-Qiu)
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2010/05/24
AUGMENTED-WAVE METHOD
ELECTRONIC-STRUCTURE
SEMICONDUCTORS
FILMS
ZNSE
ZNTE
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