CORC

在结果中检索

CORC

浏览/检索结果: 共51条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Tailoring the in-plane epitaxial relationship of InN films on (1 1 1)SrTiO3 substrates by substrate pretreatment 期刊论文
applied surface science, 2012, 卷号: 258, 期号: 7, 页码: 2927-2930
Jia, CH; Chen, YH; Zhang, B; Liu, XL; Yang, SY; Zhang, WF; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage 期刊论文
carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124
Zhu XF; Li LX; Huang SL; Wang ZG; Lu GQ; Sun CH; Wang LZ
收藏  |  浏览/下载：25/3  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：27/0  |  提交时间：2012/01/06
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 6, 页码: art. no. 067302
Guo Y (Guo Yan); Liu XL (Liu Xiang-Lin); Song HP (Song Hua-Ping); Yang AL (Yang An-Li); Zheng GL (Zheng Gao-Lin); Wei HY (Wei Hong-Yuan); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：204/46  |  提交时间：2010/07/05
GE  GAAS  GROWTH  
Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO 期刊论文
acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784
Dong JJ (Dong J. J.); Zhang XW (Zhang X. W.); You JB (You J. B.); Cai PF (Cai P. F.); Yin ZG (Yin Z. G.); An Q (An Q.); Ma XB (Ma X. B.); Jin P (Jin P.); Wang ZG (Wang Z. G.); Chu PK (Chu Paul K.)
收藏  |  浏览/下载：151/22  |  提交时间：2010/07/05
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:  Xu B;  Ye XL
收藏  |  浏览/下载：69/0  |  提交时间：2010/03/08
Epitaxial growth on 4H-SiC by TCS as a silicon precursor 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 21-25
作者:  Liu Xingfang
收藏  |  浏览/下载：31/0  |  提交时间：2010/11/23

©版权所有 ©2017 CSpace - Powered by CSpace