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Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys 期刊论文
optics express, 2013, 卷号: 21, 期号: 21, 页码: 24497–24503
Fan S, Qin Z, He C, Hou M, Wang X, Shen B, Li W, Wang W, Mao D, Jin P, Yan J, Dong P.
收藏  |  浏览/下载:14/0  |  提交时间:2014/03/18
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载:49/4  |  提交时间:2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载:52/10  |  提交时间:2011/07/05
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate 期刊论文
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:  Tang AW
收藏  |  浏览/下载:83/5  |  提交时间:2011/07/15
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载:43/4  |  提交时间:2011/07/15
Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress 期刊论文
physical review letters, 2010, 卷号: 104, 期号: 6, 页码: art. no. 067405
Ding F; Singh R; Plumhof JD; Zander T; Krapek V; Chen YH; Benyoucef M; Zwiller V; Dorr K; Bester G; Rastelli A; Schmidt OG
收藏  |  浏览/下载:150/37  |  提交时间:2010/04/21
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:196/52  |  提交时间:2010/04/28
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:  Wei XC;  Duan RF;  Ding K
收藏  |  浏览/下载:76/19  |  提交时间:2010/03/08
Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4099-4104
Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Cui LJ (Cui Li-Jie); Li DL (Li Dong-Lin); Gao HL (Gao Hong-Ling); Zeng YP (Zeng Yi-Pine); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao)
收藏  |  浏览/下载:65/0  |  提交时间:2010/03/29
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789
作者:  Jin P
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11


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