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CORC

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Air-stable ambipolar organic field-effect transistors based on phthalocyanince composites heterojunction 期刊论文
CHEMICAL PHYSICS LETTERS, 2005, 卷号: 407, 期号: 1-3, 页码: 87-90
作者:  Wang, J;  Wang, HB;  Yan, XJ;  Huang, HC;  Yan, DH
收藏  |  浏览/下载：7/0  |  提交时间：2019/04/09
Air-stable ambipolar organic field-effect transistors based on phthalocyanince composites heterojunction 期刊论文
Chemical physics letters, 2005, 卷号: 407, 期号: 1-3, 页码: 87-90
作者:  Wang, J;  Wang, HB;  Yan, XJ;  Huang, HC;  Yan, DH
收藏  |  浏览/下载：12/0  |  提交时间：2019/05/10
High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration 专利
专利号: US6849866, 申请日期: 2005-02-01, 公开日期: 2005-02-01
作者:  TAYLOR, GEOFF W.
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/26
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 外文期刊
2005
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/26
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文
CHINESE PHYSICS, 2005, 卷号: 14, 期号: 3, 页码: 565-570
Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K; Zhang, EX; Yi, WB; Chen, M; Wang, X
收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文
chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570
Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17

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