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Manufacture of distributed feedback semiconductor device 专利
专利号: JP1990235386A, 申请日期: 1990-09-18, 公开日期: 1990-09-18
作者:  YAMAGUCHI MASAYUKI
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THE N-TYPE P-TYPE PHOTORESPONSE TRANSITION OF MG-DOPED AND ZN-DOPED POLYCRYSTALLINE IRON-OXIDE ELECTRODES 期刊论文
腐蚀科学, 1990
CAI, SM; JIANG, DL; LU, T; TONG, R; ZHOU, MY; FUJISHIMA, A
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