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The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Schottky heterojunction-assisted photocatalytic hydrogen evolution by ZnIn2S4/Co3S4 hollow leaves derived from Co-ZIF-L
期刊论文
APPLIED ORGANOMETALLIC CHEMISTRY, 2022, 页码: 13
作者:
Song, Huihui
;
Sun, Zhongqiao
;
Chai, Ning
;
Han, Yide
;
Xu, Yan
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/10/08
Co3S4 hollow leaves
hierarchical hollow heterostructure
photocatalytic hydrogen evolution
Schottky junction
ZnIn2S4
Tuning the nitrogen contents in carbon matrix encapsulating Co nanoparticles for promoting formaldehyde removal through Mott-Schottky effect
期刊论文
APPLIED SURFACE SCIENCE, 2022, 卷号: 583, 页码: 10
作者:
Zhu, Dandan
;
Chen, Meijuan
;
Huang, Yu
;
Li, Rong
;
Huang, Tingting
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2023/12/29
Nitrogen-doped carbon
Mott-Schottky effect
Co nanoparticles
Room-temperature formaldehyde removal
Catalytic oxidation
Interfacial Schottky junction of Ti(3)C(2)T(x )MXene/g-C3N4 for promoting spatial charge separation in photoelectrochemical cathodic protection of steel
期刊论文
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2022, 卷号: 426, 页码: 11
作者:
Ma, Xiumin
;
Ma, Zheng
;
Zhang, Hongguang
;
Lu, Dongzhu
;
Duan, Jizhou
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/07/18
g-C3N4
Ti3C2
Schottky junction
Spatial charge separation
Cathodic protection
Finely dispersed and highly toluene sensitive NiO/NiGa2O4 heterostructures prepared from layered double hydroxides precursors
期刊论文
SENSORS AND ACTUATORS B-CHEMICAL, 2021, 卷号: 345, 页码: 9
作者:
Nie, Linfeng
;
Fan, Guijun
;
Wang, Anqi
;
Zhang, Le
;
Guan, Jian
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2021/10/15
Layered double hydroxides
Toluene sensor
Heterojunction
Schottky barrier
Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2021, 卷号: 198
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2021/10/14
Graphene
InP
Heterostructure
Vertical strain
Electric field
Schottky barrier
Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity
期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 875
作者:
Shen, Shijie
;
Zhang, Huanhuan
;
Xu, Aijiao
;
Zhao, YuYi
;
Lin, Zhiping
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2021/06/03
Catalyst activity
Degradation
Electric fields
Energy gap
Light
Nickel compounds
Phosphorus compounds
Photocatalytic activity
Rhodium compounds
Selenium compounds
Semiconductor junctions
Vanadium compounds
Work function
Built-in electric fields
Co catalysts
Photocatalytic activities
Photocatalytic performance
Photocatalytic reactions
Photogenerated carriers
Reaction under
Schottky junctions
Solvothermal method
Visible light
Effect of Cu on the passivity of Ti-xCu (x=0, 3 and 5 wt% ) alloy in phosphate-buffered saline solution within the framework of PDM-II
期刊论文
ELECTROCHIMICA ACTA, 2021, 卷号: 386, 页码: 8
作者:
Siddiqui, Muhammad Ali
;
Ren, Ling
;
Macdonald, Digby D.
;
Yang, Ke
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2021/10/15
Ti-xCu
Passivity
Electrochemical Impedance Spectroscopy
Mott-Schottky
Point Defect Model-II
Single-Dislocation Schottky Diodes
期刊论文
NANO LETTERS, 2021, 卷号: 21, 期号: 13, 页码: 5586-5592
作者:
Tao, Ang
;
Yao, Tingting
;
Jiang, Yixiao
;
Yang, Lixin
;
Yan, Xuexi
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2021/10/15
dislocation
Schottky diode
conductive atomic force microscopy
transmission electron microscopy
first-principles calculations
Single-Dislocation Schottky Diodes
期刊论文
NANO LETTERS, 2021, 卷号: 21, 期号: 13, 页码: 5586-5592
作者:
Tao, Ang
;
Yao, Tingting
;
Jiang, Yixiao
;
Yang, Lixin
;
Yan, Xuexi
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2021/10/14
dislocation
Schottky diode
conductive atomic force microscopy
transmission electron microscopy
first-principles calculations
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