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Correlation between the structural change and the electrical transport properties of indium nitride under high pressure 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 卷号: 19, 期号: 39, 页码: 26758-26764
作者:  Zhang, Junkai;  Qi, Ji;  Ma, Yanzhang;  Hu, Tingjing;  Yan, Jiejuan
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/11
Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector 期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Yan, Tingjing; Chong, Ming; Zhao, Degang; Zhang, Shuang; Chen, Lianghui
收藏  |  浏览/下载:19/0  |  提交时间:2012/06/14
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 2, 页码: 101-104
作者:  Yan Tingjing;  Chen Lianghui;  Zhang Shuming
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/23


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