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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文 Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329 作者:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi 收藏  |  浏览/下载：17/0  |  提交时间：2015/12/30 GaAsN  Schottky diode  Growth orientation  I-V characteristics  C-V characteristics  Electrical properties   Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文 Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46 作者:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita 收藏  |  浏览/下载：16/0  |  提交时间：2016/10/25 GaAsN  First principle calculation  N incorporation  Growth orientation  Chemical potentials   Growth orientation dependence of Si doping in GaAsN 期刊论文 Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4) 作者:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi 收藏  |  浏览/下载：30/0  |  提交时间：2015/12/30 Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文 Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6) 作者:  Han, Xiuxun;  Hwang, Jong-Ha;  Kojima, Nobuaki;  Ohshita, Yoshio;  Yamaguchi, Masafumi 收藏  |  浏览/下载：12/0  |  提交时间：2013/12/17 Effect of crucible rotation on oxygen concentration during unidirectional solidification process of multicrystalline silicon for solar cells 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 4, 页码: 1123-1128 作者:  Matsuo, Hitoshi;  Ganesh, R. Bairava;  Nakano, Satoshi;  Liu, Lijun;  Arafune, Koji 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/18 Solar cells  Semiconducting silicon  Directional solidification  Impurities   Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 22, 页码: 4666-4671 作者:  Matsuo, Hitoshi;  Ganesh, R. Bairava;  Nakano, Satoshi;  Liu, Lijun;  Kangawa, Yoshihiro 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/18 Solar cells  Semiconducting silicon  Directional solidification  Impurities