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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electronic structure of molybdenum-involved amorphous silica buffer layer in MoOx/n-Si heterojunction 期刊论文 APPLIED SURFACE SCIENCE, 2019, 卷号: 473, 页码: 20-24 作者:  Chen, Dongyun[1];  Gao, Ming[2];  Wan, Yazhou[3];  Li, Yonghua[4];  Guo, Haibo[5] 收藏  |  浏览/下载：13/0  |  提交时间：2019/04/22 Amorphous SiOx(Mo) layer  Density functional theory  Charge transition levels  Trap-assisted tunneling  Heterojunction solar cells   Effect of post-annealing on the properties of thermally evaporated molybdenum oxide films: Interdependence of work function and oxygen to molybdenum ratio 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 卷号: 75, 页码: 166-172 作者:  Han, Baichao[1];  Gao, Ming[2];  Wan, Yazhou[3];  Li, Yong[4];  Song, Wenlei[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Molybdenum oxide  Thermal evaporation  O/Mo ratio  Work function  Optical properties   The high-frequency tunnel capacitance overload phenomenon of semiconductor-insulator-semiconductor heterojunction caused by the ultra-thin interfacial layers 期刊论文 Kexue Tongbao/Chinese Science Bulletin, 2017, 卷号: 62, 页码: 3385-3391 作者:  Li, Yong[1];  Gao, Ming[2];  Wan, Yazhou[3];  Du, Huiwei[4];  Chen, Shumin[5] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24 Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 页码: 17566-17576 作者:  Gao, Ming[1];  Wan, Yazhou[2];  Li, Yong[3];  Han, Baichao[4];  Song, Wenlei[5] 收藏  |  浏览/下载：10/0  |  提交时间：2019/04/24 ternary hybrid interface layer  quasi-SIS heterojunction solar cell  passivated hole-selective contacts  hole tunneling  inversion layer   Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region 期刊论文 APPLIED SURFACE SCIENCE, 2016, 卷号: 388, 页码: 57-63 作者:  Chen, Shumin[1];  Gao, Ming[2];  Wan, Yazhou[3];  Du, Huiwei[4];  Li, Yong[5] 收藏  |  浏览/下载：16/0  |  提交时间：2019/04/26 XPS  Si based compound  Interface states  SIS device