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Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28
作者:  Yang, Chao;  Liang, Hongwei;  Zhang, Zhenzhong;  Xia, Xiaochuan;  Zhang, Heqiu
收藏  |  浏览/下载:17/0  |  提交时间:2019/12/02
Concentration effect on up-conversion luminescence and excitation path-dependent luminescence temperature quenching in YNbO4:Ho3+/Yb3+ phosphors 期刊论文
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2019, 卷号: 217, 页码: 107-112
作者:  Wang, Xin;  Li, Xiangping;  Shen, Rensheng;  Xu, Sai;  Cheng, Lihong
收藏  |  浏览/下载:22/0  |  提交时间:2019/12/02
Sol-gel auto-combustion preparation and photoluminescence properties of Er3+-doped K2La2Ti3O10 phosphors with superior thermal luminescence stability 期刊论文
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2019, 卷号: 578
作者:  Li, Xiangping;  Tian, Yu;  Shen, Rensheng;  Li, Xuejing;  Xu, Sai
收藏  |  浏览/下载:17/0  |  提交时间:2019/12/02
Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3 期刊论文
RSC ADVANCES, 2018, 卷号: 8, 页码: 6341-6345
作者:  Yang, Chao;  Liang, Hongwei;  Zhang, Zhenzhong;  Xia, Xiaochuan;  Tao, Pengcheng
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/02
High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2018, 卷号: 893, 页码: 39-42
作者:  Zhu, Zhifu;  Zhang, Heqiu;  Liang, Hongwei;  Tang, Bin;  Peng, Xincun
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/02
Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 卷号: 28, 页码: 2598-2601
作者:  Xia, Xiaochuan;  Liang, Hongwei;  Geng, Xinlei;  Chen, Yuanpeng;  Yang, Chao
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/02
Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition 期刊论文
CRYSTAL GROWTH & DESIGN, 2017, 卷号: 17, 页码: 3411-3418
作者:  Liu, Jianxun;  Liang, Hongwei;  Xia, Xiaochuan;  Liu, Yang;  Liu, Jun
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/02
Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 60, 页码: 66-70
作者:  Liu, Jianxun;  Liang, Hongwei;  Liu, Yang;  Xia, Xiaochuan;  Huang, Huolin
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/02
Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 卷号: 121, 页码: 18095-18101
作者:  Liu, Jianxun
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/09
Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD 期刊论文
RSC ADVANCES, 2016, 卷号: 6, 页码: 60068-60073
作者:  Liu, Jianxun;  Liang, Hongwei;  Li, Binghui;  Liu, Yang;  Xia, Xiaochuan
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/09


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