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Method of bonding a semiconductor device using a compliant bonding structure 专利
专利号: US20120225505A1, 申请日期: 2012-09-06, 公开日期: 2012-09-06
作者:  NEFF, JAMES G.;  EPLER, JOHN E.;  SCHIAFFINO, STEFANO
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/30
Compliant bonding structures for semiconductor devices 专利
专利号: US20110114987A1, 申请日期: 2011-05-19, 公开日期: 2011-05-19
作者:  EPLER, JOHN E.;  KRAMES, MICHAEL R.;  NEFF, JAMES G.;  SCHIAFFINO, STEFANO
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/30
Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same 专利
专利号: US5563094, 申请日期: 1996-10-08, 公开日期: 1996-10-08
作者:  PAOLI, THOMAS L.;  EPLER, JOHN E.
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/26
Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth 专利
专利号: US5436192, 申请日期: 1995-07-25, 公开日期: 1995-07-25
作者:  EPLER, JOHN E.;  PAOLI, THOMAS L.
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/26
Quantum wire semiconductor laser 专利
专利号: US5138625, 申请日期: 1992-08-11, 公开日期: 1992-08-11
作者:  PAOLI, THOMAS L.;  EPLER, JOHN E.
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/26
Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth 专利
专利号: US5013684, 申请日期: 1991-05-07, 公开日期: 1991-05-07
作者:  EPLER, JOHN E.;  PAOLI, THOMAS L.
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/26
Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth 专利
专利号: US4962057, 申请日期: 1990-10-09, 公开日期: 1990-10-09
作者:  EPLER, JOHN E.;  TREAT, DAVID W.;  PAOLI, THOMAS L.
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/26
Disordering of semiconductors 专利
专利号: EP0269359A3, 申请日期: 1989-03-29, 公开日期: 1989-03-29
作者:  EPLER, JOHN E.;  BURNHAM, ROBERT D.
收藏  |  浏览/下载:11/0  |  提交时间:2020/01/18
Epitaxial deposition of thin films 专利
专利号: EP0336672A2, 公开日期: 1989-10-11
作者:  EPLER, JOHN E.;  CHUNG, HARLAN F.;  PAOLI, THOMAS L.
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/26


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