CORC

浏览/检索结果: 共11条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Guidelines for the use and interpretation of assays for monitoring autophagy (4th edition) 期刊论文
AUTOPHAGY, 2021, 卷号: 17
作者:  Klionsky, Daniel J.;  Abdel-Aziz, Amal Kamal;  Abdelfatah, Sara;  Abdellatif, Mahmoud;  Abdoli, Asghar
收藏  |  浏览/下载:267/0  |  提交时间:2021/05/31
Simplified Models of Non-Invasive Fractional Flow Reserve Based on CT Images 期刊论文
PLOS ONE, 2016
Zhang, Jun-Mei; Zhong, Liang; Luo, Tong; Lomarda, Aileen Mae; Huo, Yunlong; Yap, Jonathan; Lim, Soo Teik; Tan, Ru San; Wong, Aaron Sung Lung; Tan, Jack Wei Chieh; Yeo, Khung Keong; Fam, Jiang Ming; Keng, Felix Yung Jih; Wan, Min; Su, Boyang; Zhao, Xiaodan; Allen, John Carson; Kassab, Ghassan S.; Chua, Terrance Siang Jin; Tan, Swee Yaw
收藏  |  浏览/下载:7/0  |  提交时间:2017/12/03
Origin and Quenching of Novel ultraviolet and blue emission in NdGaO3: Concept of Super-Hydrogenic Dopants 期刊论文
SCIENTIFIC REPORTS, 2016, 卷号: 6
作者:  Ghosh, Siddhartha;  Saha, Surajit;  Liu, Zhiqi;  Motapothula, M.;  Patra, Abhijeet
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/30
Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template 专利
专利号: SG147120A1, 申请日期: 2011-04-29, 公开日期: 2008-11-28
作者:  CHUA, SOO JIN;  ZHOU, HAILONG;  LIN, JIANYI;  PAN, HUI
收藏  |  浏览/下载:16/0  |  提交时间:2019/12/24
Semiconductor devices grown in spherical cavity arrays and its preparation method 专利
专利号: US7811846, 申请日期: 2010-10-12, 公开日期: 2010-10-12
作者:  WANG, BENZHONG;  CHUA, SOO JIN
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/24
Method of cleaving GaN/sapphire for forming laser mirror facets 专利
专利号: US7208096, 申请日期: 2007-04-24, 公开日期: 2007-04-24
作者:  AKKIPEDDI, RAMAM;  LI, ZHONGLI;  TRIPATHY, SUDHIRANJAN;  CHUA, SOO JIN
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/23
Multi-wavelength semiconductor lasers 专利
专利号: US6937633, 申请日期: 2005-08-30, 公开日期: 2005-08-30
作者:  CHUA, SOO JIN;  TENG, JINHUA
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/26
Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure 专利
专利号: US6696372, 申请日期: 2004-02-24, 公开日期: 2004-02-24
作者:  WANG, BENZHONG;  CHUA, SOO JIN
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/26
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) 专利
专利号: US6645885, 申请日期: 2003-11-11, 公开日期: 2003-11-11
作者:  CHUA, SOO JIN;  LI, PENG;  HAO, MAOSHENG;  ZHANG, JI
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/24
Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer 专利
专利号: US6287884, 申请日期: 2001-09-11, 公开日期: 2001-09-11
作者:  JIE, WANG ZHI;  JIN, CHUA SOO
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/26


©版权所有 ©2017 CSpace - Powered by CSpace