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浏览/检索结果: 共2条，第1-2条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang X.; Li Z.; Liu Y.; Wang Y.; Yao D.; Wang L. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle  the average driving power in the laser chip is quite low  so the heating effect cemiconductor laser is very small  using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.   GaN基蓝紫光激光器制备的理论与关键技术的研究 学位论文 2008, 2008 尹以安 收藏  |  浏览/下载：3/0  |  提交时间：2016/02/14 GaN基蓝紫光激光器  MOCVD  AlGaN  InGaN/GaN多量子阱  p-InGaN/p-AlGaN超晶格  应变补偿  应变极化效应  P型欧姆接触。  GaN base bule-violet laser diode  LP-MOCVD  AlGaN  InGaN/GaN MQW  p-InGaN/p-AlGaN SLS  strained-compensated effect  strain-induced piezoelectric effect  p-type ohmic contact