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CORC

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Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT 期刊论文
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:  Yang, GG (Yang, Guangan)[ 1 ];  Wu, WR (Wu, Wangran)[ 1 ];  Zhang, XY (Zhang, Xingyao)[ 2 ];  Tang, PY (Tang, Pengyu)[ 1 ];  Yang, J (Yang, Jing)[ 1 ]
收藏  |  浏览/下载：30/0  |  提交时间：2021/03/15
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal 期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:  Li, YD (Li, Yudong);  Liu, BK (Liu, Bingkai);  Wen, L (Wen, Lin);  Wei, Y (Wei, Ying);  Zhou, D (Zhou, Dong)
收藏  |  浏览/下载：29/0  |  提交时间：2021/10/14
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：75/0  |  提交时间：2019/11/10
Experimental and simulation study on space charge characteristics of epoxy resin filled with graphene oxide 期刊论文
IET SCIENCE MEASUREMENT & TECHNOLOGY, 2019, 卷号: 13, 期号: 3, 页码: 426-434
作者:  Zhang, Siyu;  Chen, George;  Zhang, Hongliang;  Yan, Jiaqi;  Liu, Peng
收藏  |  浏览/下载：0/0  |  提交时间：2019/11/15
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：40/0  |  提交时间：2018/10/08
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
作者:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ]
收藏  |  浏览/下载：35/0  |  提交时间：2018/09/18
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
作者:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi)
收藏  |  浏览/下载：23/0  |  提交时间：2018/05/14
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27
The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation 会议论文
作者:  Ding, Man;  Cheng, Yonghong
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19
Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 2913-2921
作者:  Mu, Yifei;  Fang, Yuxiao;  Zhao, Ce Zhou;  Zhao, Chun;  Lu, Qifeng
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26

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