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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017 Han, Dedong; Huang, Lingling; Yu, Wen; Cong, Yingying; Dong, Junchen; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Channel layer thickness  flexible  nickel-doped zinc oxide (NZO)  thin-film transistor (TFT)   Flexible nickel-doped zinc oxide thin-film transistors fabricated on plastic substrates at low temperature 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Huang, Lingling; Han, Dedong; Chen, Zhuofa; Cong, Yingying; Wu, Jing; Zhao, Nannan; Dong, Junchen; Zhao, Feilong; Liu, Lifeng; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 ROOM-TEMPERATURE  SEMICONDUCTORS   High mobility transparent flexible nickel-doped zinc oxide thin-film transistors with small subthreshold swing 期刊论文 ELECTRONICS LETTERS, 2015 Huang, Lingling; Han, Dedong; Zhang, Yi; Shi, Pan; Yu, Wen; Cui, Guodong; Cong, Yingying; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 high electron mobility transistors  nickel  semiconductor doping  zinc compounds  thin film transistors  plastics  substrates  sputtering  flexible displays  high mobility transparent flexible nickel doped zinc oxide thin-film transistor  small subthreshold swing  NZO TFT  flexible transparent plastic substrate  electrical property  SS  saturation mobility  sputtering pressure  channel deposition  RF magnetron sputtering  drain current  positive threshold voltage  flexible fully transpa   Flexible nickel-doped zinc oxide thin-film transistors fabricated on plastic substrates at low temperature 其他 2015-01-01 Huang, Lingling; Han, Dedong; Chen, Zhuofa; Cong, Yingying; Wu, Jing; Zhao, Nannan; Dong, Junchen; Zhao, Feilong; Liu, Lifeng; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/04 ROOM-TEMPERATURE  SEMICONDUCTORS